Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions

Abstract

Thin films of the silver indium sulfide (AgIn 5 S 8 ) ternary semiconductor were prepared from acidic aqueous solutions containing silver nitrate, indium nitrate, and thioacetamide. Various preparative parameters, such as pH of the precursor solution, silver to indium concentration ratio [Ag]/[In], and postreaction thermal treatment conditions were changed in order to grow uniform and adherent thin films on glass substrates. A series of X-ray diffraction patterns and scanning electron micrographs were used to reveal the growth process over time. It was found that granular Ag 2 S primary films were first attached to the glass substrate, followed by the indium sulfide deposition. A (1 1 1) preferred oriented AgIn 5 S 8 with cubic spinel structure was obtained from the [Ag]/[In] ) 4 and pH 0.6 precursor solution after 673 K thermal treatment for 1 h in an Ar environment. A two-step deposition mechanism was proposed and discussed in terms of stability constants of metal complexes and classical nucleation theory. In addition, our preliminary study showed that 3-mercaptopropyl-trimethoxysilane (MPS)-modified glass substrates further promoted the homogeneity and adhesion of AgIn 5 S 8 thin films.

Electrochemical properties of an AgInS2 photoanode prepared using ultrasonic-assisted chemical bath deposition

“…Based on our experience, metal ion concentrations have a profound inuence. 11,15,23 Additionally, other parameters, such as reaction temperature, substrate surface properties, chelating agents, and etc., must be tuned in order to obtain good quality thin lms. In this study, AgInS 2 on ITO-coated glass substrates were generated when Ag/In was kept at 5.…”

Comparisons of the structural and optical properties of o-AgInS2, t-AgInS2, and c-AgIn5S8 nanocrystals and their solid-solution nanocrystals with ZnS

“…It is well known that one phase of the ternary AgInS 2 semiconductor is an In-rich compound with the general formula of AgIn 5 S 8 , having a cubic spinel structure. 19 AgIn 5 S 8 has direct energy band gaps of 1.80 eV at 300 K and 1.90 eV at 96 K and is considered to be a potential candidate for use in NC luminophores. However, there are no reports on NC luminophores of AgIn 5 S 8 NCs in the literature, although a couple of papers about off-stoichiometric AgInS 2 NCs were published quite recently.…”

“…However, there are no reports on NC luminophores of AgIn 5 S 8 NCs in the literature, although a couple of papers about off-stoichiometric AgInS 2 NCs were published quite recently. 20,21 Thus far, numerous attempts have been made to prepare AgIn 5 S 8 thin films 19,[22][23][24][25][26] and single crystals 27,28 for applications in photovoltaic devices. However, achieving a wellstructured cubic spinel phase for AgIn 5 S 8 nanoparticles (NPs) remains a challenge.…”

Preparation and characterization of visible light catalyst ZnIn<sub>2</sub>S<sub>4</sub> coated on hollow glass microbeads

“…硅醇, 极易与中空玻璃微珠表面的羟基结合脱水 [25] , 裸露在外侧的氨基及部分剩余羟基经无水乙醇溶液 清洗后被去质子化从而带负电 [26] , 以利于下一阶段 Heterogeneous photocatalytic technology based on semiconductors has been considered to be a green technology for environmental remeidation because it can use the solar energy. As a semiconductor visible light catalyst, ZnIn 2 S 4 has attracted a lot of attention because of its narrow bandgap, strong absorption of visible light and unique catalytic properties.…”