Novel bias-field-free spin transfer oscillator

Windbacher, Thomas; Makarov, Alexander; Mahmoudi, Hiwa; Sverdlov, Viktor; Selberherr, S.

doi:10.1063/1.4862936

Cited by 10 publications

(9 citation statements)

References 13 publications

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“…As discussed in Section 2.2, we observe oscillations in the common free layer, if current densities with opposing polarities above the respective thresholds are applied (shown in Fig. 3) [33], [41]. The excited precessional motions form large and stable orbits and do not require an external magnetic field (see Fig.…”

Section: Shift-registermentioning

confidence: 61%

Multiple purpose spin transfer torque operated devices

et al. 2013

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We summarize our recent work on a non-volatile logic building block required for energy-efficient information processing systems. A sequential logic device, in particular, an alternative non-volatile magnetic flip-flop has been introduced. Its properties are investigated and its extension to a very dense shift register is demonstrated. We show that the flip-flop structure inherently exhibits oscillations and discuss its spin torque nano-oscillator properties.

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Section: Shift-registermentioning

confidence: 61%

Multiple purpose spin transfer torque operated devices

et al. 2013

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“…10%. It is known that for the HOLD operation stable precessional motions are excitable [25]. This precessional motions cause a shift in the switching probabilities like in the SET operation.…”

Section: Static Disturbance With Thermal Excitationsmentioning

confidence: 99%

Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop

Windbacher

Makarov

Sverdlov

et al. 2015

Solid-State Electronics

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“…The depicted orbits vary with the free layer's dimensions and can also be tuned by changing the applied current densities [53]. The device structure and excitation principle differ from the spin torque nano-oscillators described in Berkov and Miltat [54].…”

Section: Nano-oscillatorsmentioning

confidence: 99%

Modelling of multipurpose spintronic devices

Windbacher

Ghosh

Makarov

et al. 2015

IJNT

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Modelling of spin transport and spin dynamics, as a prerequisite for designing spintronic devices, is considered. Spin injection into a semiconductor under charge depletion, charge neutrality, and charge accumulation is investigated. The existence of a maximum spin current density in the bulk at a large spin current density at the interface in charge accumulation is related to the spin current at the charge neutrality condition. Then, a novel multipurpose spintronic device is proposed and its structure as well as its working principle is explained. Two important applications for this structure, a flip flop and a nano-scale oscillator, are further elucidated and the properties related to these applications are investigated.

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Novel bias-field-free spin transfer oscillator

Cited by 10 publications

References 13 publications

Multiple purpose spin transfer torque operated devices

Multiple purpose spin transfer torque operated devices

Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop

Modelling of multipurpose spintronic devices

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