Novel ArF Excimer Laser Resists Based on Menthyl Methacrylate Terpolymer.

Abstract

Recent advances in the single-layer resist for forming finer patterns have led us to a search for new resist materials for the ArF excimer laser. We describe a novel, environmentally friendly, single-layer resist based on a menthyl methacrylate terpolymer which has good dry etch resistance and high transparency in the wavelength region of ArF emission.

Deblocking reaction of chemically amplified positive DUV resists.

“…ArF single-layer resists have been mainly developed due to their features of transparency and dry etching resistance. [1][2][3][4][5] However, in order to further improve their resolution capability, the focus margin and environmental stability in chemically amplified ArF resist systems, the relationship between resist performance and various chemical processes need to be investigated such as: acid generation efficiency by exposure, the acid diffusion and acid-catalyzed deblocking reactions. In particular, it is important to understand how the deblocking reaction in a positive resist system affects the resist's performance.…”

Organic imaging materials: a view of the future

“…A wide variety of 'derivative' photoresist designs have been developed based upon acrylate matrix resins containing pendant alicylic groups by other research groups. [31][32][33] These acrylic systems offer high-resolution imaging, but they have less than ideal etch resistance despite incorporation of alicyclic pendant groups. In KrF photoresists each monomer unit contains an etch-resistant aromatic unit, whereas in the ArF acrylic systems only a fraction of monomer units have an etch resistant pendant group.…”

Divinyloxyalkane Cross-linker on DUV Photoresist.

“…[1][2][3][4][5] Most of these single-layer photoresists were based on the concept of chemical amplification (CA). A strong acid which generated by photoirradiation catalyzes cleavage or cross-linking process and provide high photosensitivity in CA system.…”