Dissolution kinetics of a chemically amplified deep ultraviolet (DUV) positive resist, which consists of tert-butoxycarbonyl (t-BOC) protected phenolic resin, benzenesulfonic acid derivative as a photoacid generator (PAG) and an additional dissolution inhibitor, has been investigated by focusing on the polymer structures (t-BOC blocking level, molecular weight and molecular weight dispersion) and photo-acid structures. Based on the analysis of the dissolution rate curve and Arrhenius plots, it was concluded that only one mechanism, namely, the penetration of tetramethylammonium hydroxide (TMAH) developer into hydrophobic t-BOC resin, rules the dissolution kinetics. It was also found that a steep slope of the dissolution rate curve is very effective for improving resolution capability. Moreover, ideal dissolution characteristics which can realize superior resolution capability, were obtained by analyzing both experimental dissolution rate and resist profile simulation.
A numerical method is described for calculating the first-order response of an electron distribution to changes of field or scattering rate or for deriving the time development of any small distortion of the distribution. The initial state may be in thermal equilibrium or may be modified by biasing fields. The technique simplifies the analysis of transport problems in which low symmetry perturbations distort a basic system of higher symmetry. The application of the method to the calculation of the galvanomagnetic properties of materials for small electric fields is set out as a detailed example and is illustrated by reference to n-type GaAs.
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