2023
DOI: 10.1016/j.jallcom.2023.168943
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Novel approaches towards design of metal oxide based hetero-structures for room temperature gas sensor and its sensing mechanism: A recent progress

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Cited by 46 publications
(23 citation statements)
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“…43–45 Due to its high electron quenching ability, Pd facilitates the most rectifying carrier transport in the interfaces through a Schottky junction. 46,47…”
Section: Introductionmentioning
confidence: 99%
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“…43–45 Due to its high electron quenching ability, Pd facilitates the most rectifying carrier transport in the interfaces through a Schottky junction. 46,47…”
Section: Introductionmentioning
confidence: 99%
“…[43][44][45] Due to its high electron quenching ability, Pd facilitates the most rectifying carrier transport in the interfaces through a Schottky junction. 46,47 In the current research work, we have synthesized Pd-Rb 2 -O@g-C 3 N 4 /TiO 2 catalysts by hydrothermal treatment. The cocatalyst (Pd/Rb 2 O) nanoparticles were loaded in situ on the g-C 3 N 4 /TiO 2 composite during hydrothermal treatment.…”
Section: Introductionmentioning
confidence: 99%
“…6−9 Compared with most MOS-based sensors that must be driven at high temperatures, roomtemperature responsive conductive organic material-based sensors have the critical advantages of simple structure and easy integration. 10,11 Particularly, PANI has become the most attractive NH 3 -sensitive material due to its simple synthesis process, excellent electronic properties, and easy doping. 12,13 Xu et al designed a specially flexible transparent polyaniline (PANI) film with a biomimetic rose-microtome structure, demonstrating excellent sensitivity to NH 3 at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Several attempts are being made to improve the sensing performance (in terms of detection limit, sensor selectivity, speed, and operating conditions) of resistive sensors by (i) engineering the receptor layer (doping and functionalization), 9,10 (ii) fabricating junctions, 11,12 and (iii) tuning and optimizing the device architecture. 13,14 sensor powered by a TENG and based on MXene/TiO 2 / SnSe.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Several attempts are being made to improve the sensing performance (in terms of detection limit, sensor selectivity, speed, and operating conditions) of resistive sensors by (i) engineering the receptor layer (doping and functionalization), , (ii) fabricating junctions, , and (iii) tuning and optimizing the device architecture. , Chen et al demonstrated fast and low-level NO 2 sensing by tuning the Schottky barrier height and the device bias for the Au/TiO 2 /Sn 3 O 4 junction system . A study conducted by Wang et al showcased the efficacy of a Pd-doped CoTiO 3 /TiO 2 p–n heterojunction device in detecting benzene by augmenting the catalytic activity of Pd.…”
Section: Introductionmentioning
confidence: 99%