Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

Im, Ki‐Sik; Kim, Ryun-Hwi; Kim, Ki-Won; Kim, Dong-Seok; Lee, Chun Sung; Cristoloveanu, S.; Lee, Jung‐Hee

doi:10.1109/led.2012.2222861

Cited by 68 publications

(28 citation statements)

References 15 publications

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“…Since GaN material has high breakdown electric field, high electron density, and high electron mobility, AlGaN/GaN heterostructure devices have been widely used in the fields of high power and high frequency . In order to eliminate the short channel effect and improve the gate control capability, nanowire channel high electron mobility transistors (NC‐HEMTs) emerge at a historic moment and are widely proposed . Azize et al have reported the InAlN/GaN NC‐HEMTs.…”

Section: Introductionmentioning

confidence: 99%

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Zhai

et al. 2016

Physica Status Solidi (a)

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A new simple model of threshold voltage for AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) is built in this work. Firstly, four NC‐HEMTs with different nanowire channel width are fabricated, and the conventional HEMT is produced for comparison. With the nanowire channel width decreasing, the threshold voltage of NC‐HEMTs moves positively. Then, the dependence of electron concentration on the nanowire channel width is studied by Silvaco simulation software. With the nanowire channel width decreasing, the electron concentration reduces. Finally, we recognize the threshold voltage model of conventional HEMT for NC‐HEMT modeling, and the new model of threshold voltage of NC‐HEMT is obtained. This model can explain the dependence of electron concentration on nanowire channel width. The depletion region width formed by side gate is about 37 nm which is obtained by the equation of the new model.

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Section: Introductionmentioning

confidence: 99%

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Zhai

et al. 2016

Physica Status Solidi (a)

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“…However, this makes it difficult to achieve the E-mode operation since the 2DEG concentration under the gate region must be reduced to zero at zero gate bias while maintaining decent gate properties for stability and reliability considerations. Several approaches have been proposed, including the recess gate structure [5], the nonrecess Schottky gate with a thin 10-nm AlGaN layer [6], fluoride plasma treatment [7], the nanoribbon channel [8], and the p-GaN gate [9]- [14].…”

Section: Introductionmentioning

confidence: 99%

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

Chang

Hsiao

Chen

et al. 2015

IEEE Trans. Electron Devices

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In this paper, an observation of drain current instability on p-GaN gate AlGaN/GaN HEMTs is reported. Contrary to the Schottky gate AlGaN/GaN HEMTs, which show stable and consistent I d -V d curves under different pulsed conditions, the I d -V d curves for p-GaN gate AlGaN/GaN HEMTs show a dispersion in the saturation region under the same pulse conditions, which cannot be explained by the trapping of electrons in the material. A model considering the trapping of holes in the p-GaN gate under different gate and drain biases is proposed to explain this new phenomenon.

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“…In high‐power applications with simple circuitry and fail‐safe requirements, normally off devices are strongly preferred . Several approaches have been proposed to obtain an enhancement‐mode (E‐mode) operation, such as the use of a recess gate structure, fluorine treatment, a p‐type GaN cap layer, a nanoribbon MISFET, and an ultra‐thin barrier layer . The structure with p‐type gate has drawn increasing attention in the industry because of its large threshold voltage and gate voltage swing, as well as low on‐state resistance.…”

Section: Introductionmentioning

confidence: 99%

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

Cai

Zhang³

et al. 2017

Physica Status Solidi (a)

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This research investigates the impacts of the AlGaN barrier layer thickness and the Al mole fraction on p‐GaN gate AlGaN/GaN HEMTs and presents an optimized structure. Based on 2‐D drift‐diffusion simulation, the effects of the trap level in the UID GaN buffer layer on the transfer and output characteristics of the optimized device are described. The energies of the trap levels are set at 0.28, 0.33, 0.4, 0.58, and 0.9 eV below the conduction band minimum, respectively. The depth of the trap level is found to influence the off‐state leakage current and on‐state ID,max. The Shockley–Read–Hall recombination model for a single trap level is used to analyze the impact of different trap levels in the UID GaN buffer on p‐GaN gate AlGaN/GaN HEMTs.

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Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

Cited by 68 publications

References 15 publications

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

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