Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

Ge, Mei; Cai, Qing; Zhang, Baohua; Chen, Dunjun; Hu, Liqun; Xue, Junjun; Lu, Hai; Zhang, Rong; Zheng, Yi

doi:10.1002/pssa.201700368

Cited by 9 publications

(14 citation statements)

References 29 publications

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“…Thus, we only considered the effect of trap states in the GaN buffer on the current collapse effects. [ 33 ]…”

Section: Resultsmentioning

confidence: 99%

“…Thus, we only considered the effect of trap states in the GaN buffer on the current collapse effects. [33] The drain lag characteristics for the InGaN channel and GaN channel devices with a gate length of 0.3 μm are shown in Figure 4. When the gate voltage is fixed at 0 V, the drain voltage suddenly increases from 0 to 10 V. We observed a severe decrease in the saturation current density with the increasing concentration of the acceptor-like trap in the GaN buffer.…”

Section: Transient Characteristicsmentioning

confidence: 99%

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Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Ling

Wang

Shen

et al. 2022

Physica Status Solidi (a)

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The effect of the InGaN channel on the performance of high‐electron‐mobility transistors (HEMTs) through the Silvaco Atlas simulator is investigated in detail. It is shown that the 2D electron gas (2DEG) density and carrier confinement of the device can be enhanced by replacing the GaN channel with the InGaN channel. The higher 2DEG density significantly increases the saturation drain current density, thus improving the current drive capability of the device. Meanwhile, better carrier confinement alleviates the short channel effects (SCEs) and traps state‐related current collapse in the GaN buffer, effectively improving the reliability of the device. Better carrier confinement also increases the current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) to 133 and 226 GHz, while the fT and fmax of conventional GaN channel HEMTs are 104 and 167 GHz, respectively. These results indicate that AlInGaN/InGaN HEMTs achieve better performance in direct current (DC) and radio frequency (RF).

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“…Thus, we only considered the effect of trap states in the GaN buffer on the current collapse effects. [ 33 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Transient Characteristicsmentioning

confidence: 99%

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Ling

Wang

Shen

et al. 2022

Physica Status Solidi (a)

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“…This is also consistent with other reported works. [ 24–26 ] However, the doped Fe atoms themselves constitute additional absorption centers: First, under irradiation with a pulsed laser, the electrons in the Fe defect levels are excited to the conduction band. Then, the hot electrons jump from the higher energy levels to the bottom of the conduction band through carrier–lattice interactions, thereby releasing thermal energy.…”

Section: Resultsmentioning

confidence: 99%

Buckling on Fe‐Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism

Xiao

Guo

et al. 2021

Physica Status Solidi (a)

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The influence of Fe in the buffer layer on the laser liftoff (LLO) of GaN high electron mobility transistors is presented herein. LLO is performed on Fe‐doped GaN films using a KrF excimer LLO system. The morphology, crystal characteristics, and 2D electron gas (2DEG) characteristics of the GaN films after LLO are characterized using a 3D optical microscope, X‐ray diffraction, and Hall methods. The present work is different from previous methods because of the large‐area buckling instead of cracks on the Fe‐doped GaN films. The results show that the crystal quality and 2DEG characteristics of the buckled parts are significantly affected. Furthermore, a modified simulation model of the temperature and thermal‐induced stress fields in the films is used to explain the buckling of the films, whose results are consistent with the characterization results. The additional absorption centers induced by the Fe impurity energy levels increase the gradient of temperature field, thereby increasing the compressive stresses in the films at the edges of the laser spots. Moreover, a higher temperature is observed at the interface between the film and the bonding glue, which results in the debonding. Therefore, Fe‐doped GaN films are more prone to buckling than unintentionally doped GaN films.

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“…Donor-type surface traps with a level of 0.3 eV below the conduction band edge and a concentration of 1.0 × 10 13 cm −3 [16] and acceptor-type buffer traps with a level of 0.36 eV and a concentration of 1.0 × 10 17 cm −3 are set in accordance with [17]. The polarization effect is taken into account by the built-in self-consistent polarization model of the Atlas simulator [18]. The low field mobility model as a function of doping and temperature following the work of Albrecht and the high field dependent mobility model are specified by ALBRCT.N and GANSAT.N on the MOBILITY statement, respectively [19].…”

Section: Experiments and Simulation Setupmentioning

confidence: 99%

Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

Lei

Wang

Guo

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, the influence of traps on the dynamic on-resistance (R dson ) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a switching power converter with floating buck-boost topology. A new scheme based on the voltage-dependent dynamic R dson is proposed to extract the average activation energy of device degradation. The average activation energy obtained is 2.25 eV at 50-200 V and 2.60 eV at 200-600 V. In addition, the dynamic R dson is accurately extracted by a unique extraction circuit with high switching frequency up to 1 MHz and high off-state voltage up to 600 V. Meanwhile, the switching times at turn-on and turn-off transitions are captured in a floating buck-boost converter, showing that the transconductance decreases with increasing drain voltage. Furthermore, the effect of parasitic output capacitor on the dynamic R dson is investigated by an experimental method. Finally, a proper hard operating mode is proposed to alleviate the influence of the trapping effect on the performance of switching power converters.INDEX TERMS AlGaN/GaN HEMT, activation energy, dynamic on-resistance, switching time.RUI WANG received the B.S. degree from the School of Nanjing University of Posts and Telecommunications in 2017, and is currently pursuing the Ph.D. degree with the School of Electronic Science and Engineering, Nanjing University. Her research interests mainly focus on the relaibilty research of GaN-based power electronic devices, GaN-based power supply design, and so on.

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Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

Cited by 9 publications

References 29 publications

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Buckling on Fe‐Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism

Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

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