Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Kim, Hyun-Seop; Han, Sangwoo; Jang, Won Ho; Cho, Chun-Hyung; Seo, Kwang-Seok; Oh, Jae-Young; Cha, Ho-Young

doi:10.1109/led.2017.2720719

Cited by 46 publications

(26 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The gate-to-source leakage current (Igs) density of SiN x MIS-HEMT is 4.46 × 10 −4 mA/mm at V gs = 20 V, which is 1 order larger than that of SiON or SiO 2 MIS-HEMT. This can be attributed to the lower conduction band offset of SiN x from GaN [12]. As for SiO 2 MIS-HEMT, there is a rapid increase of leakage current when the gate voltage bias is lower than −35 V. This phenomenon means that the SiO 2 dielectric layers are more easily damaged than SiN x and SiON.…”

Section: Methodsmentioning

confidence: 99%

“…Gate leakage current and current collapse are the main issues that limit the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs). To overcome these problems, different dielectric materials have been proposed for the fabrication of metal-insulator-semiconductor (MIS) HEMTs, such as SiO 2 [2][3][4][5][6], SiN x [7][8][9][10][11], SiONe [12][13][14], ZrO 2 [15], Al 2 O 3 [16][17][18], and HfO 2 [19], etc. Each material has advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

“…However, SiN x has a relatively higher dielectric constant (~7), which contributes to better 2 of 11 gate control of two dimensional electron gas ( 2DEG). As a trade-off, SiON can be modulated to retain some advantages from both SiN x and SiO 2 and has been proved to be a good candidate for a gate dielectric [12]. Considering the passivation effect, these dielectric layers can reduce the surface states, modulate the strain, and improve the reliability [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

et al. 2018

View full text Add to dashboard Cite

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

et al. 2018

View full text Add to dashboard Cite

show abstract

“…In order to simplify the circuit and improve the safety, we need some methods to realize the normally off (enhancement-mode) GaN HEMT in practical applications [ 8 ]. At present, the main methods for realizing the normally off GaN HEMT include recessed gate [ 9 , 10 , 11 ], p-GaN cap layer [ 12 , 13 , 14 ], fluorine-plasma ion implantation [ 15 , 16 ], InGaN cap layer [ 17 , 18 ], and so on [ 19 , 20 , 21 ]. Among these methods, the most commonly used method is the p-GaN cap layer structure because of its high reliability [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Niu

Wang

et al. 2021

Micromachines

View full text Add to dashboard Cite

The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the on-resistance is 23 Ω·mm. The device has a good performance, which proves that the repair conditions can be successfully applied to the fabricate of the p-GaN HEMT devices.

show abstract

“…Dielectric silicon nitride SiN x films are efficient for reducing leakage currents. Silicon oxinitride SiO x N y shows good promise as a passivating layer because it combines the advantages of the two above materials SiO x and SiN x [13]. Combinations of passivation coatings are often used.…”

Section: Introductionmentioning

confidence: 99%

Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD

Sleptsova¹,

Черных²,

Podgorny³

et al. 2020

MoEM

View full text Add to dashboard Cite

We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V).

show abstract

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Cited by 46 publications

References 26 publications

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD

Contact Info

Product

Resources

About