“…At room temperature, we find the energy of 6.35 meV, also reported in Refs. [21][22][23][24]. A linear extrapolation of the E 2g mode energy at 10 K gives a value of 6.65 meV, which is in excellent agreement with our estimation of = 6.8 ± 0.5 meV (blue square in Fig.…”
Section: B Resultssupporting
confidence: 79%
“…The ±0.5 meV uncertainty in the fit is small compared to the 4 meV-FWHM of the narrow n = 0 components at 5.765 and 5.795 eV. Nevertheless, with an average value of 6.8 meV, only the lower bound of our estimation interval appears consistent with the typical energy of 6.3 meV found in the literature for the Raman-active E 2g mode of low energy [21][22][23][24]. However, the latter 6.3 meV energy was measured at room temperature whereas our study focuses on the phonon-assisted emission spectrum in hBN at 10 K. In the prospect of further supporting our demonstration of the existence of overtones of interlayer shear modes in the phonon replicas spectrum, we have performed temperature-dependent Raman experiments in order to obtain the temperature variation of the E 2g mode energy and compare it with our estimation of = 6.8 ± 0.5 meV.…”
We address the intrinsic optical properties of hexagonal boron nitride in deep ultraviolet. We show that the fine structure of the phonon replicas arises from overtones involving up to six low-energy interlayer shear modes. These lattice vibrations are specific to layered compounds since they correspond to the shear rigid motion between adjacent layers, with a characteristic energy of about 6-7 meV. We obtain a quantitative interpretation of the multiplet observed in each phonon replica under the assumption of a cumulative Gaussian broadening as a function of the overtone index, and with a phenomenological line broadening taken identical for all phonon types. We show from our quantitative interpretation of the full emission spectrum above 5.7 eV that the energy of the involved phonon mode is 6.8 ± 0.5 meV, in excellent agreement with temperature-dependent Raman measurements of the low-energy interlayer shear mode in hexagonal boron nitride. We highlight the unusual properties of this material where the optical response is tailored by the phonon group velocities in the middle of the Brillouin zone.
“…At room temperature, we find the energy of 6.35 meV, also reported in Refs. [21][22][23][24]. A linear extrapolation of the E 2g mode energy at 10 K gives a value of 6.65 meV, which is in excellent agreement with our estimation of = 6.8 ± 0.5 meV (blue square in Fig.…”
Section: B Resultssupporting
confidence: 79%
“…The ±0.5 meV uncertainty in the fit is small compared to the 4 meV-FWHM of the narrow n = 0 components at 5.765 and 5.795 eV. Nevertheless, with an average value of 6.8 meV, only the lower bound of our estimation interval appears consistent with the typical energy of 6.3 meV found in the literature for the Raman-active E 2g mode of low energy [21][22][23][24]. However, the latter 6.3 meV energy was measured at room temperature whereas our study focuses on the phonon-assisted emission spectrum in hBN at 10 K. In the prospect of further supporting our demonstration of the existence of overtones of interlayer shear modes in the phonon replicas spectrum, we have performed temperature-dependent Raman experiments in order to obtain the temperature variation of the E 2g mode energy and compare it with our estimation of = 6.8 ± 0.5 meV.…”
We address the intrinsic optical properties of hexagonal boron nitride in deep ultraviolet. We show that the fine structure of the phonon replicas arises from overtones involving up to six low-energy interlayer shear modes. These lattice vibrations are specific to layered compounds since they correspond to the shear rigid motion between adjacent layers, with a characteristic energy of about 6-7 meV. We obtain a quantitative interpretation of the multiplet observed in each phonon replica under the assumption of a cumulative Gaussian broadening as a function of the overtone index, and with a phenomenological line broadening taken identical for all phonon types. We show from our quantitative interpretation of the full emission spectrum above 5.7 eV that the energy of the involved phonon mode is 6.8 ± 0.5 meV, in excellent agreement with temperature-dependent Raman measurements of the low-energy interlayer shear mode in hexagonal boron nitride. We highlight the unusual properties of this material where the optical response is tailored by the phonon group velocities in the middle of the Brillouin zone.
“…Prior to the functionalization procedure, the spectrum of pristine exfoliated BNNS's exhibits only the characteristic in-plane B-N stretching vibration at 1366 cm -1 and out-of-plane bending vibration at 816 cm -1 respectively, Figure 6a. 38 Importantly, absent in the spectrum of the BNNSs are bands due to hydroxyl, amino or borane groups at defect sites or edges either following synthesis or following extended sonication involved in the exfoliation procedure. These groups would be expected in the FTIR spectrum at 3300, 3400 and at 2500 cm An important feature from the FTIR analysis is the characterization of strong organic features relative to the signature of the underlying BNNSs.…”
Abstract:The covalent chemical functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solution phase oxygen radical functionalization of boron atoms in the h-BN lattice. This involves a two-step procedure to initially covalently graft alkoxy groups to boron atoms and the subsequent hydrolytic defunctionalisation of the groups to yield hydroxyl-functionalized BNNSs (OHBNNSs). Characterization of the functionalized-BNNSs using HR-TEM, Raman, UV-Vis, FTIR, NMR, and TGA was performed to investigate both the structure of the BNNSs and the covalent functionalization methodology. OH-BNNSs were used to prepare polymer nanocomposites and their mechanical properties analyzed. The influence of the functional groups grafted to the surface of the BNNSs is investigated by demonstrating the impact on mechanical properties of both non-covalent and covalent bonding at the interface between the nanofiller and polymer matrices.
“…4 The parameters for strong in-plane phonon mode at ω 1 =1370cm -1 are determined by fitting the theoretical extinction spectra to the measured data as s 1 2 = 3.9×10 6 cm -2 , and γ 1 = 19cm -1 (Fig. S1).…”
Infrared transmission measurements reveal the hybridization of graphene plasmons and the phonons in a monolayer hexagonal boron nitride (h-BN) sheet. Frequencywavevector dispersion relations of the electromagnetically coupled graphene plasmon/h-BN phonon modes are derived from measurement of nanoresonators with widths varying from 30 to 300 nm. It is shown that the graphene plasmon mode is split into two distinct optical modes that display an anticrossing behavior near the energy of the h-BN optical phonon at 1370 cm −1 . We explain this behavior as a classical electromagnetic strong-coupling with the highly confined near fields of the graphene plasmons allowing for hybridization with the phonons of the atomically thin h-BN layer to create two clearly separated new surface-phonon-plasmon-polariton (SPPP) modes.
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