Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

Abstract

We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 μm (E0→E1) and a secondary peak at 11 μm (E0→E2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1×1010 cm Hz1/2/W at 13 μm was achieved at 40 K for these devices.

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

“…Although interdiffusion studies have been carried out on various QD structures using the methods of rapid thermal annealing ͑RTA͒, 9,10 ion implantation, 11,12 and dielectric capping, 12,13 few device results have emerged. Midinfrared ͑3-5 m͒ and far-infrared ͑8-14 m͒ photodetectors 3,14,15 based on QDs have been predicted to have the advantages of normal incidence and high temperature operation, larger responsivity, and detectivity, in comparison to their QW counterpart. However, the operating wavelength of quantum dot infrared photodetectors ͑QDIPs͒ is difficult to predict and control accurately due to the extremely sensitive selforganized process of the dot formation.…”

Quantum structures for multiband photon detection

“…But for 1373, and 1299, the thicknesses of the two InGaAs well layers are different, making an asymmetric structure. Among all these detectors, 1388 showed the lowest dark current, and hence the highest detectivity of~7.9×10 10 Jones at 4.6 K under -2.2 V bias and 3.2×10 10 K under -1.4 V bias was reported at 23.3 µm wavelength.…”

“…In addition, QDIPs are expected to show improved performance characteristics such as low dark current and higher operating temperatures [2,[7][8][9][10]. In a quantum dots-in-a-well (DWELL) structure, the InAs dots are placed in a thin InGaAs quantum well, which in turn is positioned in a GaAs matrix [5].…”

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

“…Many materials and structures including quantum dots [90][91][92], nanotubes [93][94][95][96], and nanowires [97][98][99] have been studied and considered to be good alternatives for silicon-based photodetectors. Interestingly, most of the 2D semiconductors are sensitive to light, heat, and ambient which makes them very attractive for applications in optoelectronic device sensing from infrared to the ultraviolet regime.…”