Nonvolatile Unipolar and Bipolar Bistable Memory Characteristics of a High Temperature Polyimide Bearing Diphenylaminobenzylidenylimine Moieties

Kim, Kyung‐Tae; Park, Samdae; Hahm, Suk Gyu; Lee, Taek Joon; Kim, Dong-Min; Kim, Jin Chul; Kwon, Wonsang; Ko, Yong Gi; Ree, Moonhor

doi:10.1021/jp902660r

Cited by 83 publications

(72 citation statements)

References 47 publications

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“…75 The observed rewritable memory behavior for P22 is due to Schottky emission and local filament formation. 76 For polymer P23, the filamentary mechanism has been demonstrated by in situ conductive atomic force microscopy measurements. 77 A memory device based on P24 exhibits excellent unipolar ON and OFF switching behavior with very low power consumption and a high ON/OFF current ratio of up to 10 11 .…”

Section: Flash Propertiesmentioning

confidence: 98%

“…By changing the hole-transporting and electron-donating moieties, four PI derivatives containing diphenylcarbamyloxy (P21), 75 diphenylaminobenzylidenylimine (P22) 76 and carbazole (P23 77 and P24 78 ) on their side chains have also been synthesized for use as excellent rewritable memory devices (Scheme 9). For example, P21 exhibits memory performance with a high ON/OFF current ratio of up to 10 9 , low power consumption and long retention time in both the ON and OFF states.…”

Section: Flash Propertiesmentioning

confidence: 99%

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Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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This review summarizes the most widely used mechanisms in high-performance polymeric resistive memory devices, such as charge transfer, space charge trapping and filament conduction. In addition, recent studies of functional high-performance polymers for memory device applications are reviewed, compared and differentiated based on the mechanisms and structural design methods used. By carefully designing the polymeric structure based on these systematically investigated switching mechanisms, almost all types of current memory characteristics can be reproduced, and these memory properties show extremely high endurance during long-term operation, which makes polyimides very suitable materials for memory applications. INTRODUCTION High-performance polymersToday, life without polymers is unimaginable. Polymers have become the major synthetic materials of the 21st century. High-performance polymers (HPPs) are particularly desirable. The synthesis and development of HPPs over the past 30 years have drawn the attention of many polymer scientists and investigators. These polymers generally possess excellent physical deformation resistance and chemical deterioration resistance at high temperatures over long periods of time. The quest for HPPs began in the late 1950s to meet the demands of the military, aerospace, machine-building and electronics industries, among many other industrial applications.Hill and Walker 1 first noted that the incorporation of aromatic segments into a polymer generally results in a notable increase in its thermal stability. For this reason, much of the research work has been directed toward aromatic compositions. Hence, HPPs usually tend to contain large numbers of aromatic units in their structures. Several of these aromatic HPPs have been used for commercial applications, such as aromatic polyamides, polyimides, polyesters, polysulfones, polytriphenylamine and heterocyclic polymers (Scheme 1). Aromatic polyamides (aramids) and polyimides, such as DuPont's Kevlar fiber and Kapton film, respectively, have been well known for a long time and constantly attract more interest than other HPPs for their useful properties, such as excellent thermal and oxidative stabilities, high mechanical strengths, low flammabilities and good chemical and radiation resistances. [2][3][4][5][6][7][8][9][10][11][12][13] However, the rigidity of the backbone and strong hydrogen bonding of these HPPs result in high melting or glass-transition

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Section: Flash Propertiesmentioning

confidence: 98%

Section: Flash Propertiesmentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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“…A typical configuration of the ReRAM device usually consists of metal/insulator/metal structures, and the operation is based on the switching of high resistance state (HRS) and low resistance state (LRS) (off and on states) after a larger bias was applied due to the formation of a conductive bridge/path [3]. In general, the switching behaviors can be classified into two types in terms of current–voltage ( I V ) behaviors, namely bipolar and unipolar switching [4,5]. The bipolar resistive switching shows a directional resistive switching depending on the polarity of the applied voltage, while the unipolar resistive switching depends on the amplitude of the applied voltage without any polarity.…”

Section: Introductionmentioning

confidence: 99%

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

et al. 2012

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A special chip for direct and real-time observation of resistive changes, including set and reset processes based on Au/ZnO/Au system inside a transmission electron microscope (TEM), was designed. A clear conducting bridge associated with the migration of Au nanoparticles (NPs) inside a defective ZnO film from anode to cathode could be clearly observed by taking a series of TEM images, enabling a dynamic observation of switching behaviors. A discontinuous region (broken region) nearby the cathode after reset process was observed, which limits the flow of current, thus a high resistance state, while it will be reconnected to switch the device from high to low resistance states through the migration of Au NPs after set process. Interestingly, the formed morphology of the conducting bridge, which is different from the typical formation of a conducting bridge, was observed. The difference can be attributed to the different diffusivities of cations transported inside the dielectric layer, thereby significantly influencing the morphology of the conducting path. The current TEM technique is quite unique and informative, which can be used to elucidate the dynamic processes in other devices in the future.

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“…On the other hand, the threshold voltage varied with the electrode pairs and the sweep direction. From 2008 to 2011, ve types of PIs, such as 6F-HAB-CBZ PI, 7 6F-HAB-DPC PI, 11 6F-HAB-TPAIE PI, 13 MTPA-PI, 17 and 6F-HAB-AM PI, 24 which showed unique switching behaviors by controlling the current compliance, were reported (Scheme 8). 14b).…”

Section: Various Memory Propertiesmentioning

confidence: 99%

“…7,11,13,17,24 When a bias is applied with a high current level (i.e., current compliance set to 0.1 A), a high number of charges will be injected into the formed lament, which overloads the capacity of the lament. 7,11,13,17,24 When a bias is applied with a high current level (i.e., current compliance set to 0.1 A), a high number of charges will be injected into the formed lament, which overloads the capacity of the lament.…”

Section: Mechanism and The Effects Of Lm Thickness Electrode Currementioning

confidence: 99%

Polyimide memory: a pithy guideline for future applications

2013

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Polymeric materials for use in memory devices have attracted significant scientific interest due to their several advantages, such as low cost, solution processability, high mechanical strength, and possible development of three-dimensional stacking devices. Taking into account the heat resistance for the device fabrication process, polyimides (PIs) are one of the most attractive polymers for memory applications due to their high thermal stability and mechanical strength. In recent years, a large number of studies have revealed that almost all kinds of memory properties from volatile to non-volatile memory can be produced by optimizing the chemical structure of the PIs. Several mechanisms have been discussed in order to explain the switching properties. Among them, two major theories, field induced charge transfer (CT) and filament formation, are thought to explain the phenomena in the PI system. In this article, recent studies of functional polyimides (PIs) for memory applications are reviewed, mostly focusing on the mechanism underlying the switching phenomena. In addition, some progress in the fabrication process for developing high density storage will also be reviewed.

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Nonvolatile Unipolar and Bipolar Bistable Memory Characteristics of a High Temperature Polyimide Bearing Diphenylaminobenzylidenylimine Moieties

Cited by 83 publications

References 47 publications

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

Polyimide memory: a pithy guideline for future applications

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