Nonvolatile resistive memory devices based on ferrocene‐terminated hyperbranched polyimide derived from different dianhydrides

Tan, Haiwei; Yu, Haixin; Song, Ying; Zhu, Shiyang; Zhang, Bo; Yao, Hongyan; Guan, Shaokang

doi:10.1002/pola.28920

Cited by 12 publications

(6 citation statements)

References 43 publications

(42 reference statements)

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“…The resistance window and the operating current of the CuO WORM memory proposed in this study are 10 6 and 10 mA, respectively (figure 3). Compared with the WORM memories reported in the literature [39,40], the CuO WORM memory exhibits a larger resistance window and a lower operating current. 520 cm −1 is attributed to the crystalline silicon substrate [41].…”

Section: Effect Of CC On Operating Current and Hrs/lrs Resistance Rat...mentioning

confidence: 84%

“…For avoiding depression of the filament growth, a CC of >1 mA is adequate for writing operation of the CuO WORM memory. In [39], an operating current of ∼20 mA was used to obtain a resistance window of 10 4 for a polymer WORM memory. In [40], the graphene oxide WORM memory with an operating current of 100 mA shows a resistance window of 10 5 .…”

Section: Effect Of CC On Operating Current and Hrs/lrs Resistance Rat...mentioning

confidence: 99%

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Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Hsu¹,

Zhang²,

Jhang³

et al. 2021

Semicond. Sci. Technol.

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This paper demonstrates write-once-read-many-times (WORM) behavior of an Ag/CuO/n + -Si memory device. The CuO resistive switching layer with a thickness of 9.7 nm was prepared using a sol-gel process. The device shows a low conduction current of 10 −10 A at a read voltage of 1 V. A sudden current increase is observed when the voltage increases to ∼3 V, corresponding to a resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS). After that, the device remains in the LRS. Degradation of the HRS and the LRS is not observed for 10 4 read cycles. The HRS/LRS resistance ratio is 10 6 , and the data retention time is over 10 5 s. The abrupt current increase cannot be triggered by a negative bias. The formation of Ag conductive bridges in the CuO layer is responsible for the resistance switching. Statistical analyses are performed to study the distributions of the set voltages and the resistances in the HRS and LRS. The effect of the compliance current on the operating current of the Ag/CuO/n + -Si WORM memory is also investigated. The carrier transport mechanisms are found to be dominated by Schottky emission, Ohmic, and SCLC conductions. The energy barrier is 1.066 eV, which is extracted by Schottky emission analysis.

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Section: Effect Of CC On Operating Current and Hrs/lrs Resistance Rat...mentioning

confidence: 84%

Section: Effect Of CC On Operating Current and Hrs/lrs Resistance Rat...mentioning

confidence: 99%

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Hsu¹,

Zhang²,

Jhang³

et al. 2021

Semicond. Sci. Technol.

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show abstract

“…In order to ensure the accuracy of the quantum simulation, the CV measurement was used to verify the theoretical results. The specific calculation formula are as follows: [31–35]

true E_{g}^{o p t} = 1240 / λ_{o n s e t}

true HOMO (eV) = - (E_{onset} + 4.80 - E_{F O C})

true LUMO (eV) = HOMO + E_{g}^{o p t}

…”

Section: Resultsmentioning

confidence: 99%

Tristable Memory Devices Based on Soluble Polyimides Containing Pendant Carbazole and Phenyl Groups

Chen

Zhu

et al. 2022

ChemistrySelect

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As an important component of highly functional macromolecule semiconductor, two kinds of new diamine monomers, bis(5‐amino‐6‐methoxy‐[1,1’‐biphenyl]‐3‐yl) methanone (BAMBPM) and bis(5‐amino‐4’‐(9H‐carbazol‐9‐yl)‐6‐methoxy‐[1,1’‐biphenyl]‐3‐yl) methanone (BACzMBPM) were used as raw materials. Two kinds of soluble aromatic polyimides were prepared from BAMBPM and BACzMBPM by polycondensation with 2,2’,3,3’‐biphenyl tetracarboxylic dianhydride (BPDA) via a two‐step procedure. The obtained polyimides were sufficiently characterized, and showed superior organic solubility and excellent thermal stability, with a weight loss of 5 % weight loss above 300 °C. Memory devices with Al/polyimide/ITO structure were prepared by the traditional method of solution spin coating. Both devices show tristable characteristics, with high ON/OFF current ratios as high as 104 and long maintenance times of 104 seconds in the environmental atmosphere.

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“…The degenerated LUMOs promote the formation of conductive CT complexes and decrease the threshold voltage, which is beneficial for memory performance. [26][27][28] In this regard, HBPI is a suitable choice to fabricate memory devices. Moreover, triazole units could act as middle bridges to facilitate the charge transfer between electron-donating and electron-accepting parts.…”

Section: Introductionmentioning

confidence: 99%

Hyperbranched polyimide with triazole core structure for nonvolatile resistive switching memory

Tian,

Zhu,

Liu

et al. 2024

Journal of Polymer Science

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Hyperbranched polyimides (HBPIs) possess a unique branched structure, which can make the lowest unoccupied molecular orbitals (LUMOs) degenerate and reduce the bandgap between the highest occupied molecular orbital (HOMO) and LUMO energy levels. The triazole group can facilitate the charge transfer process. Thus, a novel hyperbranched polyimide (HBPI‐TZA‐6FDA) has been prepared from new triazole derivative triamine monomer (TZA) and 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) for memory device. The memory device with the structure ITO/HBPI‐TZA‐6FDA/Al exhibits a low‐threshold voltage of −2.2 V and a high ON/OFF current ratio of about 105. Meanwhile, the memory device shows nonvolatile write once read many times (WORM) type memory behavior and excellent stability with an operation time of 104 at a continuous applied voltage of −1 V. Optical, electrochemical experiments, and molecular simulation have been carried out to illustrate the memory performance. The memory performance is governed by the charge transfer between TZA and 6FDA units. The branched structure and triazole unit can reduce the band gap between HOMO and LUMO energy levels effectively, which is favorable for improving charge transfer and reducing threshold voltage. The HBPI‐TZA‐6FDA‐based memory device is favorable for memory device applications due to its relatively low‐power consumption and high‐operation stability.

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Nonvolatile resistive memory devices based on ferrocene‐terminated hyperbranched polyimide derived from different dianhydrides

Cited by 12 publications

References 43 publications

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Tristable Memory Devices Based on Soluble Polyimides Containing Pendant Carbazole and Phenyl Groups

Hyperbranched polyimide with triazole core structure for nonvolatile resistive switching memory

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