Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

Abstract

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

Shock Waves and Commutation Speed of Memristors

“…The RS effect is a large, rapid, nonvolatile, reversible change of the resistance, which may be used to encode logic information. In the simplest case, one may associate high and low resistance values to binary states, but multibit memory cells are also possible [11,12].Typical systems where RS is observed are two-terminal capacitor-like devices, where the dielectric might be a TMO and the electrodes are ordinary metals. The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].…”

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

“…Multilevel unipolar resistive memory switching in amorphous SmGdO 3 Multilevel resistive switching was observed in random access memory device using amorphous SmGdO 3 (SGO) ternary oxide thin films. Non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed by varying compliance current which was attributed to compliance current dependent variation in size of conducting filaments.…”

“…Resistive random access memory (ReRAM) devices based on the resistance switching have attracted great deal of attention due to their simple design, excellent scalability, and high switching speed. [1][2][3] ReRAM devices store information through transition between high resistance state (OFF) and low resistance state (ON) on application of suitable bias voltage. Depending on the polarity of the applied voltages, the resistance switching (RS) characteristic can be classified into two types: (i) Bipolar resistance switching in which switching depends on polarity of the applied bias 4 and (ii) Unipolar resistance switching where switching is independent of the bias polarity.…”

Engineering of Functional Manganites Grown by MOCVD for Miniaturized Devices

“…Hence, synthetic manganites with tailored functional properties have clear implications in the miniaturization of new devices using microfabrication techniques, generally referred to as miniaturized devices, such as resistive switching (RS) memories, spintronic sensors, micro solar cells and micro solid oxide fuel cells . The possibility of integrating manganites into the semiconductor microtechnology (using silicon or germanium substrates) and their low‐cost synthesis by implementation of thin films at wafer scale make them promising candidates for the microelectronics industry future progress, mainly for novel “beyond‐CMOS” and “More‐than‐Moore” technologies .…”