Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Han, Jimin; Jeong, Boyoung; Kim, Yuri; Suh, Joonki; Jeong, Hongsik; Kim, Hyun-Mi; Yoon, Tae‐Sik

doi:10.1016/j.mtadv.2022.100264

Cited by 5 publications

(1 citation statement)

References 28 publications

(34 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Demand on nonvolatile memories used for various electronic systems keeps increasing, particularly for the emerging data-centric applications that operate with vast amounts of data, such as artificial intelligence, the Internet of Things, and automated driving systems. , Among a variety of nonvolatile memories, write-once-read-many-times (WORM) memory devices store memory states permanently once the programming operation is carried out . Therefore, the stored information with distinguishable memory states is neither deleted nor modified during repeated read operations once it is written by programming operation.…”

Section: Introductionmentioning

confidence: 99%

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Jeong

Han

Noh

et al. 2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

Write-once-read-many-times (WORM) memory characteristics with a large memory window are demonstrated in a thin-film transistor (TFT) composed of an indium-gallium-zinc oxide (IGZO) channel and a lithium-cobalt oxide (LiCoO x ) ion-supplying layer in the gate oxide. While the device with a thicker (5 nm) tunneling oxide showing a threshold voltage shift (ΔV T) of about 5 V by electron charging upon positive gate voltage (V GS) sweep to +25 V, the device with a 2 nm-thick tunneling oxide exhibits a large memory window with ΔV T > 20 V by Li-ion migration from LiCoO x to IGZO channel, which can be controlled as multilevel states with respect to the V GS amplitude. Incorporation of Li ions into the IGZO channel acting as p-type dopants reduces carrier concentration in the channel and consequently increases V T. The increased V T and the consequently reduced drain current are not instantly restored back by applying negative V GS, featuring WORM memory characteristics. Although the device undergoes partial retention loss, the retention remains up to about 90% after 100 min of retention time. These results verify WORM memory operations in the IGZO TFTs through gate voltage-driven Li-ion incorporation into the IGZO channel to modify its conductive states instead of using a typical electrical charging route.

show abstract

Section: Introductionmentioning

confidence: 99%

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Jeong

Han

Noh

et al. 2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

Exploring new logic devices: Unlocking potential with floating-gate transistor

Lee,

Choi,

Lee

et al. 2024

Applied Physics Reviews

View full text Add to dashboard Cite

Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to their versatile capabilities in nonvolatile memory storage, analog circuit design, and emerging applications in neuromorphic computing. These devices leverage a distinctive floating-gate structure isolated from the surrounding circuitry, enabling the storage and manipulation of charge. The ability to retain charges even without external power makes them ideal for the applications requiring persistent data storage. This review explores the fundamental principles of floating-gate devices, focusing on their application in emerging logic devices combining floating-gate structures such as (i) reconfigurable logics, (ii) multi-valued logics, (iii) neuromorphic logics, and (iv) in-sensor computing. Various types of floating-gate devices for these new concept logics are examined, highlighting their key characteristics and advantages. Potential solutions and future research directions are also discussed. Based on the comprehensive review of recent three-year studies, we aim to provide an overview of floating-gate-based logic devices, emphasizing their significance in modern electronics and their potential to enable innovative applications in the fields of logic and memory devices.

show abstract

Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

Cho

Woo

Jeong

et al. 2023

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Cited by 5 publications

References 28 publications

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Exploring new logic devices: Unlocking potential with floating-gate transistor

Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

Contact Info

Product

Resources

About

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Cited by 5 publications

References 28 publications

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Exploring new logic devices: Unlocking potential with floating-gate transistor

Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

Contact Info

Product

Resources

About

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor