Nonvolatile and Voltage-Polarity-Independent Write-Once–Read-Many-Times Memory Feature of an Al/AlOₓ:N/n⁺-Si Device

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

“…Literature and our previous works have demonstrated that the bonding state of oxygen is highly influential for electrical properties of oxide semiconductors. 44–47 Fig. 6(a–c) show the O1s XPS spectra of S/S/S, Z/Z/Z and Z/S/Z stacked semiconductor layers.…”

“…Oxygen vacancy and Sn oxidation state variation and depth profile analysis of S/S/S, Z/Z/Z and Z/S/Z stacked semiconductor layers Literature and our previous works have demonstrated that the bonding state of oxygen is highly influential for electrical properties of oxide semiconductors. [44][45][46][47] Fig. 6(a-c) show the O1s XPS spectra of S/S/S, Z/Z/Z and Z/S/Z stacked semiconductor layers.…”

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

“…14–16 Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,17–27…”

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

“…Since WORM memory devices need to store the information during repeated read operations, it is strongly required to have the stability of data storage with a large memory window and a good retention of written memory states. To date, WORM memory device characteristics have been confirmed through various approaches such as charging trap sites or forming conductive filaments to store the information in carbazole-based polyimides, polyimide-molybdenum disulfide quantum dots, polyvinylalcohol-imidazole modified graphene nanocomposites, blend of poly­(3,4-ethylenedioxithiophene), polystyrene sulfonate, and polyvinyl alcohol, polymer-PCBM hybrids, perovskite (e.g., BaTiO 3 , CsPbBr 3 ), aluminum oxynitride (AlO x :N), nickel oxide, , Al-rich Al 2 O 3 , indium-gallium-zinc oxide (IGZO), ZnO, ZrO 2 , hybrid inorganic/organic materials, , graphene oxide, , and DNA microdisks . Most of the these WORM devices have two-terminal structures, which were reported to require relatively large current for programming and have an issue of integration with the selector device to prevent cross-talk problem .…”