Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

Turowski, Marek; Raman, Ashok; Schrimpf, R.D.

doi:10.1109/tns.2004.839201

Cited by 124 publications

(39 citation statements)

References 5 publications

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“…The excess current which is present after irradiation in the NMOSFETs (Fig. 5) flows between the source and drain terminals and is likely due to the build-up of positive charge in the STI [3]- [5]. This positive charge causes the threshold voltage of the parasitic lateral transistors to decrease.…”

Section: B Off-currentmentioning

confidence: 99%

“…The steps taken to harden this 0.25 m technology encompassed guard rings and transistors with enclosed layout. Though very effective at minimizing radiation induced leakage currents related to the lateral isolation [3]- [5], those measures meant a new cell library had to be developed, the cost of which was not trivial in terms of time and resources. Nevertheless, introducing a non rad-hard, commercial CMOS technology in a radiation harsh environment was necessary, given the scarcity of foundries for radiation-hard electronics.…”

Section: Introductionmentioning

confidence: 99%

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Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices

Gerardin

Gasperin

Cester

et al. 2006

IEEE Trans. Nucl. Sci.

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Abstract-We studied the response of a commercial 0.13-m CMOS technology to high-energy (24-GeV) proton irradiation, which emulated the environment the front-end electronics of future high-energy accelerators will have to operate in, for fluences up to 10 16 p/cm 2 . After irradiation, large negative shifts in the threshold voltage and large drops in the maximum transconductance were observed in PMOSFETs, whereas comparatively smaller effects were present in NMOSFETs. Furthermore, both kinds of devices exhibited an increase in the drain off-current and in the gate leakage current. All the observed effects were roughly proportional to the proton fluence. For the PMOSFETs only, the amount of the degradation depended on the device channel length. The changes in the characteristics of the irradiated devices were attributed to the build-up of positive charge in the LDD spacer oxide and to the creation of defects in the gate oxide.

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Section: B Off-currentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices

Gerardin

Gasperin

Cester

et al. 2006

IEEE Trans. Nucl. Sci.

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“…Experimental work is often complemented by the 'fixed oxide charge' method. Using this method, unrealistic results have been reported such as in cases where the electric field produces non-uniform distribution of charge [6]. Much work on 2D analytical modeling of TID in shallow trench isolation regions of MOSFETs has been performed previously [7,8].…”

Section: Introductionmentioning

confidence: 99%

A systematic method for simulating total ionizing dose effects using the finite elements method

2017

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Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO 2 capacitors irradiated at total doses of 11.6 kRad (SiO 2 ) and 58 kRad (SiO 2 ). Driftdiffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.

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“…Adaptive dynamic 3D mesh generation capability has been developed to allow complex, multi-branched track data generated by Vanderbilt's Geant4/MRED tools [1,2] simulations to be incorporated into CFDRC NanoTCAD device simulator [3][4][5] for transient device response simulations (Fig 3).…”

Section: Introductionmentioning

confidence: 99%

Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices

Fedoseyev

Turowski

Raman

et al. 2008

Computational Science – ICCS 2008

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Abstract. This paper describes the new CFDRC mixed-mode simulator which combines multiscale 3D Technology Computer Aided Design (TCAD) device models (fluid carrier transport and nuclear ion track impact), and advanced compact transistors models. Key features include an interface and 3D adaptive meshing to allow simulations of single event radiation effects with nuclear reactions and secondary particles computed by Vanderbilt's MRED/Geant4 tools.

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Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

Cited by 124 publications

References 5 publications

Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices

Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices

A systematic method for simulating total ionizing dose effects using the finite elements method

Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices

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