Nonradiative centers in Ba3Si6O12N2:Eu2+ phosphors observed by the below-gap excitation method

Li, Ting‐Ting; Kotuska, Yousuke; Fukuda, Tsuguo; Kurushima, Tomoyuki; Kamata, Norihiko

doi:10.1016/j.matlet.2015.01.054

Cited by 7 publications

(4 citation statements)

References 10 publications

(11 reference statements)

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“…Combination of experimental intensity change as a function of the BGE density with the rate equation analysis of trap filling effect based on the SRH statistics enabled us to open a way of determining CR parameters quantitatively as the scheme of two‐wavelength excited photoluminescence (TWEPL) . Detection and investigation of CR levels have already been reported for different types of semiconductors like GaAs/AlGaAs QWs , GaN/InGaN QWs , AlGaN QWs , GaN , GaP 1− x N x , and Ba 3 Si 6 O 12 N 2 :Eu 2+ phosphors .…”

Section: Introductionmentioning

confidence: 99%

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Kamata

Suetsugu

Haque

et al. 2016

Physica Status Solidi (b)

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As an intermediate band (IB) originating from discrete nitrogen (N) levels is formed in GaP:N with increasing N concentration, GaP1−xNx alloy is considered to be a promising candidate for IB‐type solar cells. We studied the IB luminescence of a GaP1−xNx with 0.56% N and detected carrier recombination (CR) levels by superposing a below‐gap excitation (BGE) light of 1.17 eV. We resolved a high‐energy component of 2.15 eV in the IB luminescence, Ihigh, from total luminescence intensity Iall. With increasing the BGE density at fixed temperature of 5 K, the amount of decrease in Ihigh was distinctly smaller than that of simple temperature rise without the BGE at the same Iall value. We conclude that the observed intensity change of the IB luminescence due to the BGE comes not from thermal activation, but from optical excitation among the IB, conduction band, and CR levels in GaP1−xNx. It is of primal importance to understand CR levels toward determining their origins and eliminating them for realization of efficient IB‐type solar cells.

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Section: Introductionmentioning

confidence: 99%

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Kamata

Suetsugu

Haque

et al. 2016

Physica Status Solidi (b)

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“…While P 5+ ions (r = 0.17 Å, CN = 4) enter Please do not adjust margins Please do not adjust margins with six oxygen atoms to form distortedoctahedron and the other is capped with nine oxygen atoms and a nitrogen atom in the asymmetric part of the unit cell and both these sites were occupied by Ba and Eu ions with fixed occupations according to suggested formula (Figure 1e). 47 Refinement is stable and give low R-factors ( respectively. The cell volume of doped compound V = 315.538 (7) Å 3 is smaller than the cell volume of the host Ba 3 Si 6 O 12 N 2 , V = 316.94 Å 3 .…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that the Ba 3 Si 6 O 12 N 6 :Eu 2+ has been extensively reported as highly efficient green emitting phosphor for WLEDs. [44][45][46][47][48] To further promote the commercialization of Ba 3 Si 6 O 12 N 6 :Eu 2+ green phosphor, the luminescence performances including the spectral profile, quantum yield and thermal stability need be further improved and optimized. Figure 6a and 1a.…”

Section: Resultsmentioning

confidence: 99%

Enhanced green emission and thermal stability of Ba3Si6O12N2:Eu2+ by Ce3+/P5+-doping: Unity energy transfer, charge compensation and lattice strain release

Hao

Tao

Gao

et al. 2020

Journal of Luminescence

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Phosphor-converted white light-emitting diodes (pc-WLEDs) as one of the most famous solid-state lighting sources has extensively penetrated into our daily lives due to the high luminescence efficiency, low energy consumption, durability and eco-friendly features.How to further improve the luminous efficiency of trichromatic phosphor materials is the key and difficult point to achieve high quality white LED lighting, and has being always the research hotspot in the field of luminescent materials. Among various inorganic phosphor materials, green emitting phosphors commonly demonstrate the main contribution to the luminescence efficiency of WLEDs compared with another employed luminescence materials such as blue and red phosphor materials. Therefore, the development of highly efficient green phosphor materials is extremely necessary.In this work, we designed Ce 3+ , Eu 2+ codoping and P 5+ ↔Si 4+ cation substitution in the presentative Ba 3 Si 6 O 12 N 2 :Eu 2+ green phosphor to realize an enhancement of luminescence efficiency and thermal stability. Rietveld refinement results confirmed the formation of pure trigonal phase (P-3) of Ba 3 Si 6 O 12 N 2 and the successful doping of Ce 3+ , Eu 2+ , P 5+ ions.Ce 3+ and Eu 2+ ions randomly occupy two Ba crystallographic sites (Ba1 and Ba2). Ce 3+ and

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“…Eu 3 þ shows red-luminescence (570À 750 nm) from the intra-configurational 4f 6 -4f 6 parity forbidden transitions with narrow peaks of 5 D 0 -7 F J (J ¼0-4) with lifetime in ms scale [3]. However, Eu 2 þ has broad emission from the parity allowed transitions 4f 6 5d 1 -4f 7 with fast decay (ns scale) [4][5][6]. Eu 2 þ presents wide emission range changing in blue-green-yellow or red band.…”

Section: Introductionmentioning

confidence: 99%

Structure and tunable blue-white-red luminescence of Eu2+/Eu3+-doped Na5Al(PO4)2F2 single-phase phosphor

Wang

Zhao

et al. 2015

Materials Letters

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Nonradiative centers in Ba3Si6O12N2:Eu2+ phosphors observed by the below-gap excitation method

Cited by 7 publications

References 10 publications

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Enhanced green emission and thermal stability of Ba3Si6O12N2:Eu2+ by Ce3+/P5+-doping: Unity energy transfer, charge compensation and lattice strain release

Structure and tunable blue-white-red luminescence of Eu2+/Eu3+-doped Na5Al(PO4)2F2 single-phase phosphor

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