Nonlinearity of the quantum efficiency of Si reflection trap detectors at 633 nm

Abstract

Trap detectors are useful transfer standards well-suited to modern absolute radiometry. A potential problem with them is that cryogenic radiometers allow only small-diameter laser beams to enter the absorber cavity. This can significantly increase nonlinearity effects of the trap detectors even at radiant power levels below 1 mW. The results of nonlinearity investigations at 633 nm of Si reflection trap detectors are presented. Four types of trap were studied: the commercially available QED100 and QED200, and constructed traps using Hamamatsu S1227-1010BN and S1337-1010BN photodiodes. The quantum efficiency was investigated as a function of radiant power as well as of the bias voltage and beam diameter.

Measurement of the nonlinearity of Ge-and InGaAs-photodiodes at high irradiance levels

“…This points out that the nonlinearity of the investigated photodiodes depends on the current density losses within the photodiode, which depend on the photodiode illuminated area. Similar results have been reported for Si photodiodes in [10,11] and Ge photodiodes in [12].…”

Linearity limits of biased S1337 trap detectors

“…For linear response of traps it is important to know what bias we need to apply. Minimal necessary bias is function of both total power and beam diameter, but not simple linear function of irradiance as it was shown already in [3] for low nonlinearity.…”

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The upper power limit of linear response of light trap detectors was recently measured [2,3]. We have completed this measurement with test of traps with bias voltage at several visible wavelengths using silicon photodiodes Hamamatsu S1337-1010 and made a brief test of S5227-1010.

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Visible-Light Integrated PIN Avalanche Photodetectors With High Responsivity and Bandwidth

“…In particular, besides the responsivity saturating at large P in , all device variants exhibit a positive nonlinearity -also referred to as supralinearity -at intermediate P in ∼ −30 dBm. This effect has been studied in other Si photodetectors [35], [36], [37], [38], and may be caused by higher optical powers increasing the filling of traps at the Si-SiO 2 interfaces, which decreases recombination losses.…”