Nonlinear Zeeman Splitting of the Si:Be?s Acceptor Ground State: Influence of the p1/2 Split-Off Valence Band?

Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State ofZnS−in Si

“…The strongest dependence is observed for the spin-orbit splitting, which could be determined from the EDSR data unambiguously only in the case of Zn S 2 , the value of only 0.31 meV being supported by a resonance observed under uniaxial stress in phonon spectroscopy (PS) with superconductor tunnel junctions [15]. The value of 0.6 meV estimated for Be S 2 from the nonlinear Zeeman splitting [6] has been also confirmed by PS (unpublished results by Linsenmaier, see Ref. [7]).…”

“…In light of this result the increasing nonlinearity of the G 8 Zeeman effect with increasing binding energy observed previously in EDSR of group III acceptors in Si [5] can be understood by a decreasing separation of both acceptor states. In the case of the deep Be S 2 a rather precise estimate was possible [6] for this separation (0.6 meV) which was later confirmed directly by phonon spectroscopy [7].…”

“…1. A number of lines, resembling the spectra of neutral group III acceptors [5] and also of Be S 2 [6], can be attributed to singly ionized substitutional Zn. The line position depends weakly on the direction of B.…”

“…Thus there are five parameters to be determined experimentally. If the anisotropy g 0 2 can be neglected as in the case of Be 2 , the simpler matrix given in [6] is obtained. On the other hand, the familiar form g 0…”

“…The first Raman results appear to be in agreement with these predictions [21] and also give other confirmation of the value of 4.2 meV for In. The indicated g values of B, Al, Ga, In, and Be 2 have been determined by EDSR [5,6], except for g ͑7͒ of B which was obtained from magneto-Raman measurements [20]. g ͑8͒ of Tl was taken from [25].…”