2000
DOI: 10.1103/physrevlett.85.417
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Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State ofZnSin Si

Abstract: Electric-dipole spin resonance of the deep acceptor Zn(-)(S) in Si reveals close gamma(8) and gamma(7) ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Lande's formula for the g factors of a 2T2 state split by spin-orbit interaction into gamma(8) and gamma(7) this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the elec… Show more

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Cited by 7 publications
(2 citation statements)
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“…[10] was based), a more recent theoretical value is ∆ 0 = 13 meV [36]. For silicon, an extreme reduction of the spin-orbit splitting has been demonstrated for the Γ 8 and Γ 7 hole states associated with the deep acceptor ground state of s Zn − [37]. For diamond, a reduction from ∆ 0 = 13 meV to 3.9 meV for the boron-bound hole was calculated [38].…”
Section: Finestructure Of Bound Excitons In Diamondmentioning
confidence: 99%
“…[10] was based), a more recent theoretical value is ∆ 0 = 13 meV [36]. For silicon, an extreme reduction of the spin-orbit splitting has been demonstrated for the Γ 8 and Γ 7 hole states associated with the deep acceptor ground state of s Zn − [37]. For diamond, a reduction from ∆ 0 = 13 meV to 3.9 meV for the boron-bound hole was calculated [38].…”
Section: Finestructure Of Bound Excitons In Diamondmentioning
confidence: 99%
“…26͒ and electric-dipole spin resonance ͑EDSR͒. 27 The Si samples for EPR and EDSR were Zn diffused in the same way as the SiGe samples used for our DLTS studies.…”
Section: A Identification Of the Levelsmentioning
confidence: 99%