Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msubsup><mml:mrow><mml:mi>Zn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">S</mml:mi></mml:mrow><mml:mrow><mml:mo>−</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math>in Si

Schroth, H.; Laßmann, Kurt; Voß, S.; Bracht, H.

doi:10.1103/physrevlett.85.417

Cited by 7 publications

(2 citation statements)

References 21 publications

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“…[10] was based), a more recent theoretical value is ∆ 0 = 13 meV [36]. For silicon, an extreme reduction of the spin-orbit splitting has been demonstrated for the Γ 8 and Γ 7 hole states associated with the deep acceptor ground state of s Zn − [37]. For diamond, a reduction from ∆ 0 = 13 meV to 3.9 meV for the boron-bound hole was calculated [38].…”

Section: Finestructure Of Bound Excitons In Diamondmentioning

confidence: 99%

Radiative recombination in phosphorus-doped CVD diamond

Sauer

Teofilov

Thonke

et al. 2004

phys. stat. sol. (a)

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Recently published data have shown that state-of-the-art phosphorus-doped homoepitaxial CVD diamond layers exhibit 'perfect' bound exciton cathodoluminescence (CL) spectra with a triplet of narrow nophonon (NP) transitions accompanied by four well resolved wavevector-conserving phonon replicas. Here, we complement these experimental data demonstrating in particular that this superior quality of the CL spectra is highly reproducible for doping concentration from below 10 17 cm -3 to ≈ 10 19 cm -3 . In a comparison with shallow bound excitons in silicon we address the radiative quantum efficiency of the exciton luminescence and find that P-bound exciton emission in diamond is less efficient than that from B-bound excitons. Also discussed are the different intensity ratios of NP-to-TO-phonon transitions for P-and B-bound excitons. Finally the rich finestructure in the exciton spectra is considered and compared to similar finestructure appearing in other near-bandedge bound exciton luminescence spectra in diamond.

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Section: Finestructure Of Bound Excitons In Diamondmentioning

confidence: 99%

Radiative recombination in phosphorus-doped CVD diamond

Sauer

Teofilov

Thonke

et al. 2004

phys. stat. sol. (a)

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“…26͒ and electric-dipole spin resonance ͑EDSR͒. 27 The Si samples for EPR and EDSR were Zn diffused in the same way as the SiGe samples used for our DLTS studies.…”

Section: A Identification Of the Levelsmentioning

confidence: 99%

Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations

et al. 2003

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We investigated by deep-level transient spectroscopy a series of p-Si 1ϪX Ge X samples after in-diffusion of Zn. The measurements reveal two deep hole traps which are attributed to the Zn 0/Ϫ single-and Zn Ϫ/2Ϫ double-acceptor states of isolated Zn atoms on substitutional sites. The corresponding transient peaks are broadened for XϾ0 in comparison to those in pure silicon due to statistical fluctuations of the SiGe alloy composition in the local environment of the Zn atoms. This effect is described quantitatively within the alloy-broadening model which furthermore allows to determine the number of atoms sampled by the defect wave function. The results are compared with ab initio calculations for substitutional Zn in pure Si using the linear muffin-tin orbital method in the atomic-spheres approximation based on the local-density approximation. To model the Ge alloying, we have also studied trigonal pairs of substitutional Zn in Si with a single Ge ligand at different pair distances. From these results, the broadening of the transients can be understood qualitatively.

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Silicon, paramagnetic centers: principal values of g-tensors of cubic centers

Landolt-Börnstein - Group III Condensed Matter

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Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State ofZnS−in Si

Cited by 7 publications

References 21 publications

Radiative recombination in phosphorus-doped CVD diamond

Radiative recombination in phosphorus-doped CVD diamond

Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations

Silicon, paramagnetic centers: principal values of g-tensors of cubic centers

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