Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

Abstract

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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

“…Recently, a different behaviour of Si MOSFETs' and InGaAs HEMTs' photoresponse was observed at the fre− quencies of 0.1THz− 3THz and the radiation power up to 100 kW/cm 2 [4]. The photoresponse increased linearly with an increasing radiation intensity up to the kW/cm 2 range.…”

“…To ex− plain the saturation we cannot refer to the model of Ref. 4 because in our case the photocurrents reach μA region while the possible direct current at the same U g is at least by 2 orders higher (see Fig. 1).…”

“…However, experiments carried out on Si MOSFETs and InGaAs HEMTs in a wide frequency range [4] showed satu− ration of photoresponse at sufficiently high radiation inten− sities and no square root dependence was observed. To explain the observed saturation, the idea was put forward that the photoinduced direct current must be limited by the well−known saturation value of the drain current at a given U g .…”

Application of plasma-wave detectors for ultra-short pulse terahertz radiation

“…RESULTS Fig. 1b demonstrates saturation of the detector response at 100 ns pulse excitation [3] along with the results of numerical simulation using the SPICE model from [4] and THz FET detection model from [3]. Both newly developed models take into account nonlinear behavior of the DC transistor current voltage characteristics in the regime close to saturation.…”

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“…The detectors under consideration have strong dependence NEP opt (ν) (NEP opt ~ ν m ) and responsivity ℜ ~ ν -m , where m = 2…4 [7,[10][11][12]). Majority of them can be produced at foundry level as their technology readiness level is high.…”