AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Dyakonova, N.; But, Dmytro B.; Coquillat, Dominique; Knap, W.; Drexler, C.; Olbrich, P.; Karch, J.; Schafberger, Michael; Ganichev, Sergey; Ducournau, Guillaume; Gaquière, C.; Poisson, M. A.; Delage, S.; Cywiński, G.; Skierbiszewski, C.

doi:10.1515/oere-2015-0026

Cited by 9 publications

(3 citation statements)

References 12 publications

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“…At large intensities of the incident THz radiation, the response has been observed to saturate in the measurements [14]. Different propositions have been made to explain this effect [15], [16], [17]. In this work we explore the reason for the response saturation effect by examining different physical mechanisms in the physics-based simulations using the validated TCAD models [18].…”

Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect.

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Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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“…the observed photoresponse is linear in radiation intensity [14]. However, for high excitation levels, Schottky diodes and FETs can be driven into saturation [15][16][17]. Recently, the application of this device regime for fast autocorrelators providing information on the THz pulse duration and pulse structure [1,18] was reported.…”

Section: Introductionmentioning

confidence: 99%

Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique

Ikamas¹,

Lisauskas²,

Massabeau³

et al. 2018

Semicond. Sci. Technol.

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Many THz applications require detection of sub-picosecond THz pulses. Electronic detectors, in particular, can address this challenge. We report on the detection of sub-picosecond THz pulses generated by a large-area interdigitated photoconductive antenna using a AlGaN/GaN high electron mobility transistor with integrated bow-tie antenna. We demonstrate that the detector's photoresponse is linear in a wide range of gate bias voltages regarding the available THz radiation power with peak power levels of a few hundreds of milliwatts. We apply an autocorrelation technique to investigate the spectral response of our detector within a bandwidth exceeding 1 THz. We observe an unexpected frequency roll-off of responsivity, which can not be predicted using a framework of standard distributed transmission line theory. However, we show that the data can be understood if one accounts for only partial plasmon screening by the gate electrode, so that the results adhere simply to the distributed resistive mixing approximation, whereby the device suffers from the observed roll-off. This indicates, that for novel detectors and radiation sources, which intend to utilize plasma waves, it is important to ensure efficient screening by the gate electrode.

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“…For this purpose, a few different types of antennas or couplers have been realized and examined in FET-based detectors. [17][18][19][20][21][22][23] Recently, Boppel et al found that an FET detector coupled with symmetric antennas is able to detect the intensity gradient and hence allows for direct edge detection. [14] They further pointed out that the asymmetry in the antenna-coupled FETs has to be assured so that the devices can be used as pure power detectors and become insensitive to the intensity gradient.…”

Section: Introductionmentioning

confidence: 99%

The origin of distorted intensity pattern sensed by a lens and antenna coupled AlGaN/GaN-HEMT terahertz detector*

Sun

Huang

et al. 2019

Chinese Phys. B

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Antenna-coupled field-effect-transistors (FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor (HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.

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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Abstract: We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm

Cited by 9 publications

References 12 publications

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique

The origin of distorted intensity pattern sensed by a lens and antenna coupled AlGaN/GaN-HEMT terahertz detector*

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