Nonlinear optical susceptibilities of AlN film

Abstract

The nonlinear optical coefficients of AlN have been determined as ‖d33‖= (23.2±35%) dQ11 and ‖d31‖ ≲0.04‖d33‖ for the c-plate film and for a fundamental beam at 1.064 μm. The result is discussed with reference to the bond-charge model.

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…AlN is promising here, since it is both optically transparent and has relatively large nonlinear optical coefficients. [292] Combined with its potential for lasers and detectors, AlN may someday enable photonic integrated circuit platforms for quantum information processing, including those involving trapped ions. [293] …”

Modeling of gas phase and surface reactions in an aluminum nitride growth system

“…Isomorphic AlN crystal, having a wide band-gap of 6.2 eV at room temperature, could be useful as a substrate for UV detectors and blueemitting LEDs [2]. The propagation velocity of surface acoustic waves (SAW) in AlN is by far the highest reported for any material [3]. The high thermal conductivity up to 320 W/m K of AlN [4] has been exploited in manufacturing heat sinks.…”

“…One experiment run for HVTE layer growth[1] The calculated values of Re ¼ 38 3. and Gr ¼ 393.4 indicate that the gas flow is mainly laminar in the reactor,…”

Modeling of aluminum nitride growth by halide vapor transport epitaxy method

“…Isomorphic AlN crystal, having a wide band-gap of 6.2 eV [2], could be useful as a substrate for UV detectors and blueemitting LEDs [3,4]. The propagation velocity of surface acoustic waves (SAW) in AlN is by far the highest reported for any material [5]. The high thermal conductivity up to 320 W/m K of AlN [6] has been exploited in manufacturing heat sinks.…”