Modeling of aluminum nitride growth by halide vapor transport epitaxy method

Cai, Di; Zheng, Lili; Zhang, H.; Tassev, V.; Bliss, D.

doi:10.1016/j.jcrysgro.2004.11.339

Cited by 10 publications

(5 citation statements)

References 29 publications

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“…An explanation could be that experimental thermodynamic data on AlN above 930 1C [41] and other compounds such as AlCl 3 .NH 3 [12,42,43] are not available. Furthermore, the existence of a Cl 2 AlNH 2 species which is also not included in these calculations is supposed by ab-initio calculations above 600-700 1C [44] and by analogy with Cl 2 BNH 2 [45,[47][48][49] (coming from direct reaction in gas phase between BCl 3 and NH 3 ) which was measured by HT mass spectrometry measurements in CVD conditions and seems to be a key species in BN deposition process [50,51]. Fig.…”

Section: Thermodynamic Analysismentioning

confidence: 99%

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Claudel¹,

Blanquet²,

Chaussende³

et al. 2009

Journal of Crystal Growth

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To achieve AlN bulk growth, high temperature CVD process using chlorine chemistry was investigated. High growth rate and high crystalline quality are targeted for both polycrystalline and epitaxial AlN films grown on (0 0 0 1) alpha-Al2O3 Sapphire and (0 0 0 1) off axis 4H SiC or on axis 6H SiC single crystal Substrates. Thermodynamic calculations were carried out to select the more appropriate inert materials for the reactor and to understand the chemistries of Al chlorination and AlN deposition steps. The reactants were ammonia (NH3) and aluminum chlorides (AlClx) species formed in situ using chlorine gas (Cl-2) reaction with high purity Al wires. Deposition temperature was varying from 1100 to 1800 degrees C. Influences of temperature, total pressure, Cl-2 flow rate and carrier gas (Ar or H-2) on growth rate, surface morphology and crystalline state are presented. As results, films morphology is related to a variation of the thermodynamic supersaturation. As-grown AlN layers surface morphologies were studied by SEM, FEG-SEM and AFM. Crystalline state, crystallographic orientations and epitaxial relationships with substrates were obtained from theta/2 theta X-ray diffraction and X-ray pole figure, respectively. Growth rates up to 200 mu m h(-1) have been reached for polycrystalline AlN layers. (C) 2009 Elsevier B.V. All rights reserved

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Section: Thermodynamic Analysismentioning

confidence: 99%

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Claudel¹,

Blanquet²,

Chaussende³

et al. 2009

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…1(b). Gas species transport in the system is governed by the continuity, momentum, energy conservation, and species conservation equations [13] as follows:…”

Section: Governing Equations and Boundary Conditionsmentioning

confidence: 99%

“…This is because that, with a large substrate-adduct distance, more reactants can be transported to the upper area of the substrate, causing more AlN deposition to increase the deposition rate there, since the adduct boat is located at the bottom of the quartz reactor. Details on species transport analysis can be found from our previous work [13]. By increasing the substrate-adduct distance from 0.19 to 0.39 m, the deposition rate decreases from 39 to about 25 mm/h when the gasphase reaction is considered.…”

Section: Effects Of Substrate-adduct Distance On the Aln Deposition Rmentioning

confidence: 99%

“…Our previous paper [13] has studied process characteristics of AlN growth in the HVTE including fluid flow, temperature distribution, and species transport in the HVTE system under different pressures and geometric conditions, resulting in optimal design of baffle shapes to improve the uniformity of the deposition. In this paper, a comprehensive 3-D numerical model will be extended to include the critical gas-phase reaction steps being identified from the data of Dollet et al [10].…”

Section: Introductionmentioning

confidence: 99%

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Modeling of gas phase and surface reactions in an aluminum nitride growth system

Cai

Zheng

Zhang

et al. 2006

Journal of Crystal Growth

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“…Therefore, the geometry of the gas panel and the reaction in HVPE becomes more complex compared with the metal-organic vapor-phase epitaxy (MOVPE) system. Bliss et al demonstrated AlN growth by halide vapor transport epitaxy (HVTE) using aluminum chloride amine adducts as the Al source [7,8]. However, HVTE is still complex because the growth reactor consists of two regions; an evaporation zone and a growth zone.…”

Section: Introductionmentioning

confidence: 99%