Nonlinear electronic transport and device performance of HEMTs

Abstract

We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT. In this context, we discuss dc and RF performance issues for pseudomorphic AlGaAs/InGaAs/GaAs HEMTs that are especially relevant for gate-lengths of about 150 nm. All results are compared to and found to be consistent with experimental data for devices processed in tow different foundries

Accurate modeling of noise parameters in subquarter-micrometer gate FETs using physical simulators

“…N0 , G , and Ng are the available signal and available noise power at input and output, power gain of the transistor, and internally generated noise power due to the carrier transport inside the device, respectively. Knowing the gate voltage 5Vg and the drain current noise fluctuations o I d, the input noise power and the generated noise power at the output port are given by N = SVg2 I Zg (9) and Ng = 5I2Zd (10) where Zd and Zg are the intrinsic drain and gate impedance. respectively.…”

“…Hydrodynamic models offer an interesting compromise between the required physical insight and the computational effort. By coupling drift-diffusion model to hydrodynamic model [81 or to Monte-Carlo code [9][10][11] one has the accurate insight in a reasonable CPU time. This coupling, however, is not yet used in noise calculation due to the inherent numerical noise results from coupling procedure.…”

On the accuracy and computational efficiency of physical simulators used for characterizing ultra-small gate-length FETs

“…As it is not possible to find a model that perfectly satisfies all these requirements, several kinds of device models have been developed to fulfill the different designers needs. For example, drift-diffusion models [16][17][18][19][20] and hydrodynamic models [21][22][23][24][25] are considered as powerful engineering simulation tools which are able to deliver reasonable accurate results in a small computational time. However, these models are not able to take in account the non-stationary transport phenomena which are taking in ultra-small and highly doped semiconductor devices accurately.…”

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

“…The additional characteristic features of the AlGaN/GaN material that lead to excellent performance of GaN-based HEMTs are large breakdown field and high thermal stability [10]. Along with advances in HEMT fabrication, large number of analytical and numerical models has been developed [11][12][13][14][15][16][17][18][19][20][21][22]. These models are helpful as they provide good insight into the physical operation of the device.…”