Nonlinear electron mobility due to asymmetric doping in V-shaped double quantum well FET structure

Jena, Devika; Palo, Sangeeta; Панда, А. К.; Dash, T. P.; Sahu, Trinath

doi:10.1007/s12648-022-02366-4

Cited by 4 publications

(3 citation statements)

References 40 publications

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“…In addition to the confinement effect, the coupling of subband wave functions and splitting of energy levels give interesting phenomena like the resonance of subband states which modify the transport as well as optical properties of VDQW based devices [16][17][18][19][20][21][22][23][24]. Numerous studies have been made to alter the optical characteristics of single and double QW structures with V-shaped, semi-V-shaped, and inverse V-shaped shapes [7,[25][26][27][28][29][30][31][32][33]. Kasapoglu et al illustrated the effect of well width (w), F, and H on donor impurity binding energy (BE) of a VQW structure [25].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Durmuslar has shown the effect of structural modifications along with external agents on NOP in V DQW structures [31]. However, recently very few works reported on the improvement of the transport properties in VDQW structures [32][33][34]. Inspired by the ample works done on the improvement of optical properties, here we focused on the improvement of the transport properties by tuning different structure parameters like well width (w), barrier width (b), and alloy concentrations (x) in asymmetric VDQW structure.…”

Section: Introductionmentioning

confidence: 99%

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Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Jena¹,

Sahu

Sahoo

et al. 2023

Phys. Scr.

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Here, we analyse the effect of structure parameters like well width (w), central barrier width (b), and alloy concentration (x) on multisubband electron mobility µ in a GaAs-AlxGa1-xAs based modulation doped asymmetric V-shaped-double-quantum-well (VDQW) structure. The asymmetry in the structure potential is generated through the difference in the doping concentrations (Nd) in the side barriers i.e., Nd1 (0 to 4×1018 cm-3) and Nd2 (2×1018 cm-3). The mobility µ is calculated by considering ionised impurity (imp) and alloy disorder (ad) scattering mechanisms. The continuous variation of x inside the well makes µad < µimp resulting in the dominance of ad-scattering on µ as a function of Nd1. As a result, at the interface an increase in x from 0.1 to 0.3 reduces µ around 40%. However, an increase in w symmetrically (w1 = w2) enhances µ. Further, the introduction of non-symmetric well profile (w1≠ w2) not only causes asymmetric redistribution of subband wave functions ψ0 and ψ1 in the wells, but also changes the position and hence occupation of subband energy levels, thereby influencing the subband mobility. As the difference in w1 and w2 increases, the system becomes more and more single subband occupied as a function of Nd1 and hence the mobility enhances due to the absence of intersubband scattering. Our results also reflected that an increase in b from 20 Å to 80 Å has a marginal effect on µ during single subband occupancy but improves µ during double subband occupancy through intersubband interaction.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Jena¹,

Sahu

Sahoo

et al. 2023

Phys. Scr.

Self Cite

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“…Such as other types of non-square wells, V-shaped QWs offer distinctive electronic and optical characteristic with stronger quantum confinement potentials compared to square type wells [23,24]. Furthermore, the feasible asymmetry tailoring via structure parameters made double V-shaped quantum wells (DVQWs) the subjects of some studies as given follows: The tunable nonlinear electron mobility by varying well width, barrier width, doping concentration and potential height of V-shaped double well in the presence of external electric field is examined in [24,25]. In these studies, the possible usage of that QW in mobility adjustment for fine-tuning of channel conductivity is illustrated.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Durmuslar

2022

Preprint

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Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.

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Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped Al_xGa_1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields

Durmuslar

2023

Philosophical Magazine

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Nonlinear electron mobility due to asymmetric doping in V-shaped double quantum well FET structure

Cited by 4 publications

References 40 publications

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped Al_xGa_1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields

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Nonlinear electron mobility due to asymmetric doping in V-shaped double quantum well FET structure

Cited by 4 publications

References 40 publications

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped AlxGa1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields

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Product

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Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped Al_xGa_1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields