Nonlinear copper behavior of TSV for 3D-IC-integration and cracking risks during BEoL-built-up

Auersperg, J.; Vogel, Dietmar; Auerswald, Ellen; Rzepka, Sven; Michel, B.

doi:10.1109/eptc.2011.6184380

Cited by 7 publications

(5 citation statements)

References 9 publications

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“…For the calculation of the TSV annealing many studies change the material properties of copper to reach a fit of measurements and FE-results [5,[15][16][17]. But current investigations allow the conclusion that besides microstructure changes in copper also a stress minimum is present at annealing temperature [1,2,10].…”

Section: Simulationmentioning

confidence: 96%

μ-Raman spectroscopy and FE-modeling for TSV-Stress-characterization

Saettler

Hecker

Boettcher

et al. 2015

Microelectronic Engineering

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Section: Simulationmentioning

confidence: 96%

μ-Raman spectroscopy and FE-modeling for TSV-Stress-characterization

Saettler

Hecker

Boettcher

et al. 2015

Microelectronic Engineering

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“…Therefore, 3D IC with through silicon via (TSV) becomes a inevitable product for high density and high performance operations. In recent years, the researches of 3D IC are mainly focused on the relevant issues including front end of line for wafer handling [1], TSV manufacturing and characterization [2][3][4], novel package process [5][6], micro-bump design and bondability [7][8][9], reliability test and analysis [10][11][12]. However, as a result of high-cost, technique barriers, and low yields, 3D IC is still difficult to be a general productive product at present.…”

Section: Introductionmentioning

confidence: 99%

Atomistic simulation analysis for influence of organic PA types on PA/UF adhesion in 2.5D IC package

Wang

Hung

Lee

et al. 2014

2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

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2.5D IC is an important transition product of 3D IC in the next generation. It has very important commercial value. However, at present 2.5D IC package process has numerous issues that need to be overcome, especially for interface delamination caused by warpage under reflow temperature. Conventionally, the material adopted for the passivation (PA) layer in 2.5D IC package is inorganic metal glass. But for being cost-effective, organic polymer is another choice. Accordingly, the adhesion strength between organic PA and underfill (UF) layers is a critical issue. In this paper, molecular dynamics (MD) simulation is applied to analyze the interface adhesion between organic PA and UF layers affected by five chemical PA types, compensating for essential limitations of experimental and FE simulation analysis. From the pull test curves of MD simulation, the adhesion strength of different PA types to UF layers corresponding to molecular interaction mechanisms such as chemical bond force, non-bond force including Coulomb electrostatic force and van der Waals adsorption, and mechanical interlocking force are examined. The present results reveal that the adhesion strength of the five PA types to UF layers display significant variations, which could be attributed to different strength characteristics in molecular interaction mechanisms due to different PA chemical structures. The ranking order for the maximum adhesion strengths of the pull test curves with five PA chemical types is of acrylic, BCB, epoxy resin of novolak, polyimide, and PBO, types, respectively. The maximum adhesion strengths of the pull test curves with five chemical PA types exhibit the obviously discrepancies, which demonstrates that different PA chemical types play the key role to affect the adhesion strength of PA and UF layers. With regard to the maximum adhesion strength of PA and UF layer affected by the molecular interaction mechanisms, the key influence factors should be Coulomb electrostatic force, van der Waals adsorption, and the mechanical interlocking force because the trend variations are highly related with the value distributions of the maximum adhesion strengths, but due to the page restrictions, the analysis results and interpretations are not presented here. Based on the present study, it could be further extended to establish the design rule for the material development and synthesis of the workability performance promotion of organic PA or UF.

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“…For many applications, such as 3D LEDs and ICsin an integrated package, including a plurality of LEDs and active IC chips, such as application-specific IC, LED drivers, processor, memory, RF, sensors, or power controller in a three-dimensional manner, the advantage of using TSVs is better performance, smaller size, and lower cost [3,4]. Because thermal cracking can occur in the structure of TSVs through heat cycles, replacement of silicon with aluminum, copper, nickel,or tungsten material was analyzed, and the best result was with a tungsten material.In analyzing the filling material for the silicon structure during perforation nonlinear behavior of the copper material, it is essential to examine any resulting damage and peeling at the silicon interface [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Thermal Effects Analysis of Flip Chip LED Packages with through Silicon via (TSV) by Using Numerical Simulation

Chien

Chen

2013

AMM

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With advancement of technology, package sizes and products are becoming smaller due to miniaturization. Separate light-emitting diode (LED) chips and control integrated circuits with through silicon via (TSV) structurescan be combined to achieve reduced size. LED chipswithFlip Chip structureare capable of higher optical efficiency and heat dissipation. Analysis of LED chip structure after heat-related destruction of the chip indicated that the chip suffered stress from heating and cooling. The material used for TSV structures is copper, sincethis provides good electrical conductivity and high thermal conductivity. However, the thermal expansion coefficient of copper is higher than for other materials and can result in thermal expansion coefficient mismatch. Hence, the use of this material is likely to cause stress concentration and thus cause damage. In this study, molybdenum and tungsten were tested as replacements for copper in TSV, and the modified TSV was subjected to simulation analysis.The results indicate that replacement of TSV materials can reduce thermal expansion coefficient mismatch and consequent stress fracture and that the performance of different materials can be simulated by Fatigue Analysis and Load.

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Nonlinear copper behavior of TSV for 3D-IC-integration and cracking risks during BEoL-built-up

Cited by 7 publications

References 9 publications

μ-Raman spectroscopy and FE-modeling for TSV-Stress-characterization

μ-Raman spectroscopy and FE-modeling for TSV-Stress-characterization

Atomistic simulation analysis for influence of organic PA types on PA/UF adhesion in 2.5D IC package

Thermal Effects Analysis of Flip Chip LED Packages with through Silicon via (TSV) by Using Numerical Simulation

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