Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

Naranjo, F. B.; Kandaswamy, P.; Valdueza-Felip, S.; Calvo, V.; Gonzalez-Herraez, Miguel; Martín‐López, Sonia; Corredera, Pedro; Méndez, José A.; Vasundhara, М.; Lacroix, Bertrand; Ruterana, P.; Monroy, E.

doi:10.1063/1.3535609

Cited by 29 publications

(29 citation statements)

References 18 publications

(15 reference statements)

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“…A first strategy is the use of InN, which presents a room temperature direct bandgap of:0.64 eV (:1.94 µm). For this purpose, Naranjo et al explored the potential of InN films and InN/InGaN multi-quantum-well structures with interband transitions at 1.55 µm, by analyzing their third-order nonlinear susceptibility (χ (3) ) [11] and their nonlinear absorption [12]. For these structures, a minimum recovery time in the range of tens of ps can be achieved [13].…”

Section: Introductionmentioning

confidence: 99%

Waveguide saturable absorbers at 155 μm based on intraband transitions in GaN/AlN QDs

et al. 2013

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Abstract:We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TMpolarized light increases with the incident optical power due to the saturation of the s-p z intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 µm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 pJ and 150 fs. Nature 431(7012), 1081-1084 (2004). 3. N. Bloembergen, "Nonlinear optics: past, present, and future," IEEE J. Sel. Top. Quant. 6(6), 876-880 (2000). 4. K. S. Kim, R. H. Stolen, W. A. Reed, and K. W. Quoi, "Measurement of the nonlinear index of silica-core and dispersion-shifted fibers," Opt. Lett. 19(4), 257-259 (1994). 5. C. Vinegoni, M. Wegmuller, and N. Gisin, "Measurements of the nonlinear coefficient of standard SMF, DSF, and DCF fibers using a self-aligned interferometer and a Faraday mirror," IEEE Photonic Tech. L. 13(12), 1337-1339 (2001 859-869 (2005). 9. S. Noda, T. Yamashita, M. Ohya, Y. Muromoto, and A. Sasaki, "All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells," IEEE J. Quantum Electron. 29(6), 1640-1647 (1993

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Section: Introductionmentioning

confidence: 99%

Waveguide saturable absorbers at 155 μm based on intraband transitions in GaN/AlN QDs

et al. 2013

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“…The epitaxial process proceeded at a substrate temperature of 450 °C with a nitrogen-limited growth rate of 280 nm/h (more details can be found in [15] where F is the impinging fluence, Fsat is the saturation fluence of the material, and Tlin and Tns are the linear and non-saturable transmittance, respectively [25,26]. By fitting Eq.…”

Section: Methodsmentioning

confidence: 99%

“…III-nitride semiconductors can behave as saturable absorbers within the C-band involving either interband (bulk InN [15,16], InN/InGaN quantum wells [15]) or intersubband transitions (GaN/AlN quantum wells or quantum dots [17,18]). III-nitrides present not only high thermal and chemical stability, but also enhanced nonlinearities due to the asymmetry of their crystalline structure [19,20].…”

Section: Introductionmentioning

confidence: 99%

Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber

Jimenez-Rodriguez¹,

Monteagudo-Lerma²,

Monroy³

et al. 2017

Opt. Express

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, 2017, "Widely power-tunable polarizationindependent ultrafast mode-locked fiber laser using bulk InN as saturable absorber", Optics Express, 25 (5), pp. 5366-5375.Available at http://dx.doi.org/10.1364/OE.25.005366 © 2017 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. (Article begins on next page) Abstract:The growing demand of ultrafast mode-locked fiber lasers in the near infrared has boosted the research activity in this area. One of the most convenient ways to achieve passive mode locking consists of inserting a semiconductor saturable absorber in the laser cavity to modulate the losses. However, in such a configuration, the limited power range of operation is still an unsolved issue. Here we report the fabrication of an ultrafast, high-power, widely powertunable and non-polarization-dependent mode-locked fiber laser operating at 1.55 µm, using an InN layer as saturable absorber. With post-amplification, this laser delivers 55-fs pulses with a repetition rate of 4.84 MHz and peak power in the range of 1 MW in an all-fiber arrangement.

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“…Apart from these heterostructures, the interband transition of InN/InGaN systems with relaxation lifetimes of a few ps [5] can be considered as an interesting active alternative for covering the telecommunications C-band (1.53-1.57 µm). Another option comes from the InN material with band gap energy ~0.7 eV [6] which operates at 1.55 µm presenting recovery times in the range of ps [7]. Finally, InN material by radio-frequency (RF) sputtering with the band gap at ~1.7 eV provides an attractive solution for two-photon-absorption (TPA) based limiters devices, showing recovery times in the range of 300 fs [8].…”

Section: Introductionmentioning

confidence: 99%

InN-Based Optical Waveguides Developed by RF Sputtering for All-Optical Applications at 1.55 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>

Monteagudo-Lerma

Naranjo

Jimenez-Rodriguez

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-We report on the design, fabrication and optical characterization of InN-based optical waveguides aiming at their application as all-optical limiters at 1.55 µm. The InN guiding layers are grown by radio-frequency (RF) sputtering on sapphire substrates. Experimental cut-back method and nonlinear optical transmittance measurements were performed for the developed devices. The waveguides present nonlinear behavior associated with two photon absorption process. A nonlinear absorption coefficient ranging from ~43 cm/GW to ~114 cm/GW is estimated from optical measurements. These results open the possibility of using RF sputtering as a low cost and thermally harmless technique for the development and overgrowth of InN-based optical waveguides in future III-nitride all-optical integrated circuits working at telecom wavelengths.

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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

Cited by 29 publications

References 18 publications

Waveguide saturable absorbers at 155 μm based on intraband transitions in GaN/AlN QDs

Waveguide saturable absorbers at 155 μm based on intraband transitions in GaN/AlN QDs

Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber

InN-Based Optical Waveguides Developed by RF Sputtering for All-Optical Applications at 1.55 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>

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