Nonequilibrium electron-hole plasma in GaAs quantum wells

Höpfel, R. A.; Shah, Jagdeep; Gossard, A. C.

doi:10.1103/physrevlett.56.765

Cited by 89 publications

(18 citation statements)

References 12 publications

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“…This increase in carrier temperature is reasonable to expect at the high electric fields applied perpendicular to the layers. Electric field induced heating of carriers confined in quantum wells have been observed experimentally [59]. These results are consistent with the measured pulse response.…”

Section: (A)-(c)supporting

confidence: 87%

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Larsson

Andrekson

Eng

et al. 1988

IEEE J. Quantum Electron.

105

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Abstract-We report on extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage tunable superlattice p-i-n photodetectors in a waveguide configuration. This includes a reduced wavelength spacing, an investigation of the polarization dependence of the crosstalk and bit-error-rate measurements for various crosstalk levels. We show that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gbit/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mbits/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. The paper includes a theory for the emission of photogenerated carriers out of the quantum wells since this is potentially a speed limiting mechanism in these detectors. We show that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

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Section: (A)-(c)supporting

confidence: 87%

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Larsson

Andrekson

Eng

et al. 1988

IEEE J. Quantum Electron.

105

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“…5. The decoupling of the electron and hole distributions has also been shown previously in GaAs quantum 12 The electron-hole energy transfer rates determined and scaled to our experiment are two orders of magnitude smaller than the hole energy-loss rates, which is consistent with the model of almost completely decoupled electron and hole distributions. 6.…”

Section: Discussionsupporting

confidence: 79%

Ultrafast recombination in H⁺-bombarded InP and GaAs: consequences for the carrier distribution functions

et al. 1992

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We studied the lifetimes and the luminescence spectra of photoexcited carriers in H bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime we observe an increase of the high energy tail of the timeintegrated luminescence spectrum which is even inverted for the 95 fs InP sample.inverted -the luminescence intensity is higher at higher energies. With estimations for the hole distribution it will be shown that the time average of the electron distribution is inverted. O-8194-0838-7/92/$4.OO SPIE Vol. 1677 (1992)! 9 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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“…[17][18][19] The other one is the hole which is "cold" under high field and can interact with hot electron and then accelerate energy disspation. 20,21 For the former case, as reported by Matulionis et al, 17 the hot phonon lifetime is closely related to the electron density when taking plasma-LO phonon coupling into account. The estimated resonant density is about 6:5-7:0 Â 10 12 cm À2 and shifts to higher values with increasing power in GaN based materials.…”

Section: Effects Of Light Illumination On Electron Velocity Of Algan/mentioning

confidence: 69%

“…This kind of mechanism has been reported by Hopfel in GaAs systems. 20 Holes are hard to be heated and keep "cool" compared with electrons under high electric field. The energy relaxation rates of electrons to lattice and to "cold" holes could be comparable under high electric field.…”

Section: Effects Of Light Illumination On Electron Velocity Of Algan/mentioning

confidence: 99%

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Guo

Yang

Feng

et al. 2014

Applied Physics Letters

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We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

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Nonequilibrium electron-hole plasma in GaAs quantum wells

Cited by 89 publications

References 12 publications

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Ultrafast recombination in H⁺-bombarded InP and GaAs: consequences for the carrier distribution functions

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

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Nonequilibrium electron-hole plasma in GaAs quantum wells

Cited by 89 publications

References 12 publications

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

Ultrafast recombination in H+-bombarded InP and GaAs: consequences for the carrier distribution functions

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

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Ultrafast recombination in H⁺-bombarded InP and GaAs: consequences for the carrier distribution functions