Ultrafast recombination in H⁺-bombarded InP and GaAs: consequences for the carrier distribution functions

Abstract

We studied the lifetimes and the luminescence spectra of photoexcited carriers in H bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime we observe an increase of the high energy tail of the timeintegrated luminescence spectrum which is even inverted for the 95 fs InP sample.inverted -the luminescence intensity is higher at higher energies. With estimations for the hole distribution it will be shown that the time average of the electron distribution is inverted. O-8194-0838-7/92/$4.OO SPIE Vol. 1677 (1992)! 9 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx