Nondestructive technique for the detection of dislocations and stacking faults on silicon wafers

Abstract

Articles you may be interested inOn the role of stacking faults on dislocation generation and dislocation cluster formation in multicrystalline silicon

Thermal Wave Imaging of Nonvisible Defects in IC Devices

“…Metal precipitates, dislocations and stacking faults are all detectable with this imaging system when operated in a modulated reflectance mode [5]. In this mode the signal is primarily determined by the local pump-generated plasma waves [3], and the defects become visible through the presence of a locally enhanced electron-hole plasma density due to the reduced plasma diffusitivity and carrier recombination lifetime in the vicinity of the silicon defects.…”

<title>Femtosecond ellipsometry and surface second-harmonic probes of Ge, Si1-xGex, Si, and diamond</title>

“…(2) suggest. The coefficients ei/"L have been measured for equilibrium heating of Ge to elevated temperature.…”

A charge-coupled-device-based heterodyne technique for parallel photodisplacement imaging

“…1,2 This technique is based on detecting the thermal or thermoelastic wave generated by the periodic heating of a sample with intensity-modulated light. 8 These schemes have been reported to be useful to various degrees for detecting subsurface microcracks, 9 dislocations, 10 and the ion dose 11 in silicon wafers, voids and cracks in ceramics, 12,13 and surface or subsurface cracks in metals. 8 These schemes have been reported to be useful to various degrees for detecting subsurface microcracks, 9 dislocations, 10 and the ion dose 11 in silicon wafers, voids and cracks in ceramics, 12,13 and surface or subsurface cracks in metals.…”