Nondestructive determination of free-electron concentration and mobility in Hg1−xCdxTe, n-type InSb, and n-type GaAs

Clarke, Frederick W.

doi:10.1063/1.355974

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…The same factor of 2.12 was obtained in this author's previous measurements [14] using a different apparatus at CO 2 wavelengths (9.3-10.8 µm) and different analysis method. (Note in that paper a factor of 1.86 was reported but measured m* values were compared to calculated band edge values that were calculated using another formulation of Eg.…”

Section: Resultsmentioning

confidence: 98%

Measurement of electron effective mass ratios in Hg 1-x Cd x Te for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K

Clarke

Balevieius²,

McDonald

et al. 2004

Infrared Detector Materials and Devices

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Section: Resultsmentioning

confidence: 98%

Measurement of electron effective mass ratios in Hg 1-x Cd x Te for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K

Clarke

Balevieius²,

McDonald

et al. 2004

Infrared Detector Materials and Devices

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“…Equations for calculating absorption from transmission compensated for multiple internal reflection due to thin samples with near parallel surfaces are contained in Ref. 4. The problem of separating rotation components can be avoided by using a rotation spectrum rather than measurements at a single wavelength.…”

Section: Methodsmentioning

confidence: 99%

An optical alternative to the hall test

Clarke

1997

Journal of Elec Materi

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Effective mass ratios, m*, of electrons in n-type InSb, GaAs, and near intrinsic and n-type Hgl_xCdxTe for 0.20 < x < 0.30 over the temperature range 77K < T < 296K were measured using Faraday rotation spectroscopy, m* ranged from 0.0186 to 0.0357 for InSb with carrier concentrations, N, in the range 1.76 < N < 110 • 1018 cm ~ at 296K, in good agreement with available values in the literature. Effective masses of HgCdTe were found to be about twice as large at room temperature as band edge effective mass, m*~ calculations. These calculations can be corrected for thermal excitation by adding a factor, m**, to the band edge calculation: m* = m** m*~, where m** was found empirically to be m** = 4.52 • 10-3T + 0.78. The electron's mobility is proportional to the ratio of the electron's Faraday rotation to its absorption; that is, the absorption due to the intraband transitions of the electron itself, not the sample's total absorption, which may include holes, interband transitions, and the like. The constant of proportionality, or the "mobility constant", was measured in n-type GaAs and InSb doped above 18 • 10 ~6 cm -3 using absorption directly. Both HgCdTe and InSb have large intrinsic carrier concentrations, on the order of 101~ cm -3. Hole absorption is the majority component of the sample's absorption at lower n-type dopant concentrations. In these cases, the mobility constant was determined using an absorption cross section.

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Microwave Radar for Non-Destructive Express Testing of Electrical Properties of Semiconductor Materials

Novickij

2011

Acta Phys. Pol. A

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Microwave radar for non-destructive express testing of electrical properties of semiconductor materials which consists of pulsed magnet, transmitting and receiving antennas, high frequency generator, pulsed modulator and digital oscilloscope is described. In semiconductor specimen placed in pulsed magnetic field a magnetoplasmic wave is excited and propagated through the specimen. Delay time and attenuation of transmitted and reference signals are measured to find a value of concentration and mobility of free charge carriers in semiconductors. Experimental data of testing of InSb, n-InSb specimens are presented and acceptable for express testing correspondence of results was achieved.

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Nondestructive determination of free-electron concentration and mobility in Hg1−xCdxTe, n-type InSb, and n-type GaAs

Abstract: MBE grown CdTe films on (001)GaAs and (001)InSb

Cited by 3 publications

References 19 publications

Measurement of electron effective mass ratios in Hg 1-x Cd x Te for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K

Measurement of electron effective mass ratios in Hg 1-x Cd x Te for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K

An optical alternative to the hall test

Microwave Radar for Non-Destructive Express Testing of Electrical Properties of Semiconductor Materials

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