Microwave Radar for Non-Destructive Express Testing of Electrical Properties of Semiconductor Materials

Abstract

Microwave radar for non-destructive express testing of electrical properties of semiconductor materials which consists of pulsed magnet, transmitting and receiving antennas, high frequency generator, pulsed modulator and digital oscilloscope is described. In semiconductor specimen placed in pulsed magnetic field a magnetoplasmic wave is excited and propagated through the specimen. Delay time and attenuation of transmitted and reference signals are measured to find a value of concentration and mobility of free charge carriers in semiconductors. Experimental data of testing of InSb, n-InSb specimens are presented and acceptable for express testing correspondence of results was achieved.

Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods

“…Therefore, a fast and non-contact (NC) measurement process is ideal for the characterization of the electrical properties of graphene by avoiding the above problems. Many efforts in NC or microwave probing methods for Hall testing have been recently reported [18][19][20]. Several groups have used these techniques to test the electrical properties of graphene [21][22][23].…”