Nondestructive depth profiling of carrier lifetimes in full silicon wafers

Guidotti, Daniel; Batchelder, J. S.; Vechten, J. A. Van; Finkel, A.

doi:10.1063/1.96764

Cited by 19 publications

(19 citation statements)

References 14 publications

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“…However, with photoluminescence measurements we were able to determine these quantities. From the absolute photoluminescence intensity, 10 the luminescence phase delay, [19][20][21] and spatially resolved photoluminescence measurements 22,23 an upper limit for the diffusion lengths in our samples was determined. We found L diff р20 m for sample B, L diff р12 m for sample C and in the case of sample D the diffusion length is even smaller, but we were unable to determine the exact value.…”

Section: Methodsmentioning

confidence: 99%

Ultra-low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

Daub

Würfel

1996

Journal of Applied Physics

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Section: Methodsmentioning

confidence: 99%

Ultra-low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

Daub

Würfel

1996

Journal of Applied Physics

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“…Lock-in rate-window results retain the time-domain character of the photocarrier generation and recombination processes while being superior to coadded PCR transients especially in the case of an n-type Si sample with poor electronic carrier recombination characteristics. It is concluded that time-domain PCR detection at room temperature and above is sensitive to band-to-defect or band-to-impurity recombinations in Si, which are intrinsically long decay-time processes ͑ӷ10 s͒, as opposed to fast band-to-band recombination processes ͑ϳ2.9 s͒ which have been reported to date 11,17,19 under the generic label of room-temperature photoluminescence.…”

Section: Discussionmentioning

confidence: 99%

“…The complexities of the dual-slope method 10 can thus be totally avoided, especially in the more general and widely typical case where S 1 S 2 where that method may be inapplicable. The double-exponential curve fit of the radiative decay process of photocarriers used by Guidotti et al, 19 who found two distinct and widely different PL decay times in Si subjected to a square-wave laser pulse, is another example of the need for adequate and careful theoretical modeling of these time-domain processes using the full eigenmode spectrum of the radiative recombination dynamics.…”

Section: Fig 13mentioning

confidence: 99%

“…Roomtemperature PL is generally a nonlinear two-body process of electron-hole band-to-band recombination at high photoexcitation densities. It is fast ͑ϳ2.9 s decay time 19 ͒ and thus requires considerably higher frequencies ͑100 kHz-10 MHz͒ than PCR. 16 King and Hall have performed spectroscopic studies of near-band-edge PL emissions from silicon 17 at 30, 130, and 300 K in the spectral region between 1000 and 1700 nm, which coincides with the InGaAs spectral bandwidth.…”

Section: Introductionmentioning

confidence: 99%

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Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon

Mandelis

Pawlak

Wang

et al. 2005

Journal of Applied Physics

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Time-domain and lock-in rate-window photocarrier radiometry ͑PCR͒ configurations are introduced both experimentally and theoretically to investigate the responses of p-and n-type Si wafers under a repetition-period-scanned square-wave-modulated super-band-gap laser beam which produces free excess photocarriers. The complete asymmetric time-domain carrier diffusion and recombination boundary-value problem with different front-and back-surface recombination velocities was solved in terms of the full spectrum of spatial eigenmodes and used to fit the time-domain data. The accurate measurement of the photocarrier transport properties ͑bulk lifetime, surface recombination velocities, and ambipolar diffusivity͒ was found to require the linear superposition of all the effective decay lifetimes associated with the eigenmode spectrum. The effects of the infinite prior pulse train to the current photocarrier radiometric response wave form were quantified and were found to be very important for certain ranges of transport parameters, pulse durations, and repetition periods. The time-domain formalism was further used to develop a theory for lock-in rate-window photocarrier radiometry. The application of the theory to the experimental results shows that they retain the time-domain character of the photocarrier generation and recombination processes, with data quality and signal-to-noise ratio superior to coaddition-averaged transients, especially in the case of samples exhibiting very low time-domain PCR signals.

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“…It invariably involves a nonlinear two-body process of electron-hole band-to-band recombination at high photoexcitation densities in the high-injection regime ͑Ͼ10 16 cm −3 ͒. It is fast ͑ϳ2.9 s decay time 20 ͒ and thus requires considerably high frequencies to be detected under harmonic optical excitation ͑100 kHz − 10 MHz͒. The use of both amplitude and phase improves reliability compared to approaches that use a single channel 21 and provides more information than transient decay techniques.…”

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confidence: 99%

Electronic Defect and Contamination Monitoring in Si Wafers Using Spectrally Integrated Photocarrier Radiometry

Shaughnessy

Mandelis

2006

J. Electrochem. Soc.

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The ability of spectrally integrated room-temperature photocarrier radiometry to image electronic defects and contamination in silicon wafers is presented. Amplitude and phase imaging contrast is a result of signal sensitivity to local variations in the recombination lifetime of photoexcited carriers. Experimental frequency scans are fitted to carrier density-wave theory to simultaneously obtain the recombination lifetime, diffusivity, and surface recombination velocities ͑front and back͒. Lifetime measurements are combined with lateral surface scans to produce quantitative lifetime imaging. Contaminated boron-doped silicon wafers with iron concentration ϳ10 11 cm −3 on a baseline of ϳ5 ϫ 10 9 cm −3 have been successfully imaged and exhibit a much higher spatial resolution than surface photovoltage images. Recombination lifetime measurements before and after photodissociation of FeB pairs have been utilized for quantitative determination of iron concentration; however, lifetime accuracy limitations due to photodissociation by the excitation laser under medium-to-high optical injection levels required for photocarrier radiometric measurements compromise the accuracy of heavy ion ͑Fe͒ concentration measurements.

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Nondestructive depth profiling of carrier lifetimes in full silicon wafers

Abstract: Quantitative carrier lifetime images optically measured on rough silicon wafers

Cited by 19 publications

References 14 publications

Ultra-low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

Ultra-low values of the absorption coefficient for band–band transitions in moderately doped Si obtained from luminescence

Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon

Electronic Defect and Contamination Monitoring in Si Wafers Using Spectrally Integrated Photocarrier Radiometry

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