“…where γ 3 , which is inversely proportional to the product of the system resistance and the quantum capacitance, is the dielectric relaxation rate constant [136], n 0 is the electron concentration at the thermal equilibrium, and ǫ b is the relative dielectric constant of the host semiconductor material. The exact microscopic calculations of γ 1 and γ 2 in the absence of space-charge field were carried out previously [137] based on the semiclassical Boltzmann transport equation and the coupled force-energy balance equations [101], respectively.…”