“…9 In recent years, there have been a lot of interests in the research field dealing with the effect of SOI or the Rashba effect, on the electron transport and optical properties of low-dimensional semiconductor electronic systems. [10][11][12][13][14][15][16][17] Such an SOI results from the asymmetry in a confining potential for an electron or a hole gas at the interface of a hetero-structure. Particularly, some of these studies aim at identifying potential spintronic-device applications, e.g., a spin-based transistor, in which the spin-current can be manipulated purely by electrical means (i.e., spin-Hall effect) 18,19,31 .…”