Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate

Hmar, Jehova Jire L.

doi:10.1016/j.mee.2020.111436

Cited by 15 publications

(5 citation statements)

References 38 publications

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“…26(c), he shows an inset and a photograph of Al/ZnO-GO-PVA/Al/PET substrate under various bending angles. It demonstrates the mechanical flexibility and endurance of the ZnO embedded GO/PVA composite for flexible NVM application [281]. The durability performance of PET/rGO/ZnONRs/Au device with a negligible degradation after 1000 bending cycles is shown in Fig.…”

Section: F Transparent/flexible Zno Based Rrammentioning

confidence: 75%

“…Since mechanical flexibility is key to bendable NVM, other memory characteristics should also be preserved in various angles and situations during and after repetitive mechanical bends. Moreover, Hmar [281] demonstrates bendable non-volatile memory in Fig. 26(c), he shows an inset and a photograph of Al/ZnO-GO-PVA/Al/PET substrate under various bending angles.…”

Section: F Transparent/flexible Zno Based Rrammentioning

confidence: 99%

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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Section: F Transparent/flexible Zno Based Rrammentioning

confidence: 75%

Section: F Transparent/flexible Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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“…In addition, numerous researchers believe that the resistance switching mechanism of GO-RRAM is the oxygen vacancy conducting filament mechanism [115][116][117][118][119][120][121][122][123][124]. Khurana et al [125] discovered that the mechanism for resistance switching in the Al/GO-zinc oxide nanorods (ZNs)/ITOPET device is the formation of oxygenvacancy conductive filaments.…”

Section: Rs Based On Oxygen Vacanciesmentioning

confidence: 99%

“…Layered nano-hybrid materials composed of functionalized organic-inorganic materials have attracted extensive attention due to their unique properties. Grafting organic-inorganic hybrid materials on GO also contributes to the optimization of device performance [123,157,158,189]. Gogoi et al [157] prepared an ITO/rGO-cds/polymethyl methacrylate (PMMA)/Al structure sandwich device, for devices containing 0.4 wt.% nanohybrid nanofillers.…”

Section: Doping With Organic and Inorganic Compoundsmentioning

confidence: 99%

“…The in-depth research in the field of flexible electronics is a new engine driving comprehensive innovation and development. Due to its ultrathin, low energy consumption, good biocompatibility, and tunable mechanical properties, GO flexible resistive memory occupies a place in the field of flexible devices, which possesses good performance parameters, namely, the bottom electrode of GO-based flexible resistive memory is generally evaporated on flexible substrates such as PET or PES [6,9,39,77,82,104,119,123,125,129,130,156,169,171,176,188,208,[213][214][215]. It is particularly noteworthy Jeong et al conducted the research on GO flexible resistive memory earlier [6].…”

Section: Flexible Electronicsmentioning

confidence: 99%

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Graphene oxide-based random access memory: from mechanism, optimization to application

Xiu²,

Jiang³

et al. 2022

J. Phys. D: Appl. Phys.

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According to Moore's Law's development law, traditional floating gate memory is constrained by charge tunneling, and its size has approached the physical limit, which is insufficient to meet the requirements of large data storage. The introduction of new information storage devices may be the key to overcoming the bottleneck. Resistive random access memory (RRAM) has garnered interest due to its fast switching speed, low power consumption, and high integration density. Generally, the resistive switching (RS) behaviors can be explained by the formation/rupture of nanoscale conductive filaments (CFs) in many materials, including transition metal oxides, perovskite oxides and organic matter, etc.. Among these materials, graphene oxide (GO) with its unique physical, chemical properties and excellent mechanical properties is attracting significant attention for use in RRAM owing to its RS operation and potential for integration with other graphene-based electronics. The stoichiometry of sp2 to sp3 bonds determines the electrical properties of GO films. The random formation of CFs is usually attributed to the migration of oxygen functional groups driven by electricity field and transition from sp3 to sp2 bonds at the nanoscale. However, there is unacceptable variability in RS reliability, including retention and endurance, which is the key factor that affects the development of memristors. In this article, we discuss systematically several typical models of the switching mechanism of GO-based RRAM and a summary of methods for improving the device's RS performance. This article concludes by discussing the applications of GO-RRAM in artificial neural networks, flexible devices, and biological monitoring.

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Threshold switching behavior generated by the in situ filaments formation in carbon matrix enriched by ultra-small zirconium oxide nanoparticles

et al. 2022

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Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate

Cited by 15 publications

References 38 publications

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Graphene oxide-based random access memory: from mechanism, optimization to application

Threshold switching behavior generated by the in situ filaments formation in carbon matrix enriched by ultra-small zirconium oxide nanoparticles

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