Non-volatile epsilon-near-zero readout memory

Parra, Jorge; Olivares, Irene; Brimont, A.; Sanchís, Pablo

doi:10.1364/ol.44.003932

Cited by 21 publications

(16 citation statements)

References 29 publications

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“…A 5‐µm‐long intensity device has been proposed using ITO. [ 32 ] The device is shown in Figure a. Extinction ratios greater than 10 dB in a bandwidth of 100 nm were reported.…”

Section: Nonvolatile Switching Enabled By Device Engineeringmentioning

confidence: 99%

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Toward Nonvolatile Switching in Silicon Photonic Devices

Parra

Olivares

Brimont

et al. 2021

Laser & Photonics Reviews

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Nonvolatile switching is still a missing functionality in current mainstream silicon photonics complementary metal‐oxide‐semiconductor platforms. Fundamentally, nonvolatile switching stands for the ability to switch between two or more photonic states reversibly without needing additional energy to hold each state. Therefore, such a feature may push one step further the potential of silicon photonics by offering new ways of achieving photonic reconfigurability with ultrasmall energy consumption. Here, a detailed review of current developments that enable nonvolatile switching in silicon photonic waveguide devices is provided. Nonvolatility is successfully demonstrated either based on device engineering or by hybrid integration of silicon waveguides with materials exhibiting unique optical properties. Furthermore, several approaches with high potential for evolving toward a nonvolatile behavior with enhanced performance are also being explored. In most cases, many development steps are still necessary to ensure reliable devices. However, this research field is expected to progress in the coming years boosted by current and emerging applications benefiting from such functionality, such as new paradigms for photonic computing or advanced reconfigurable circuits for programmable photonic systems.

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“…A 5‐µm‐long intensity device has been proposed using ITO. [ 32 ] The device is shown in Figure a. Extinction ratios greater than 10 dB in a bandwidth of 100 nm were reported.…”

Section: Nonvolatile Switching Enabled By Device Engineeringmentioning

confidence: 99%

mentioning

confidence: 99%

Toward Nonvolatile Switching in Silicon Photonic Devices

Parra

Olivares

Brimont

et al. 2021

Laser & Photonics Reviews

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“…This system (namely, "plasmonic memristor"), on one hand, has volatile or non-volatile memory with electrical write/erase and optical readout functionality [10,15,16]. On the other artificial synapses, image recognition and even neuromorphic visual systems, were explored at different wavelength ranges [10,14,15,[19][20][21][22][23]. The plasmonic memristor based on a silicon photonics platform is especially attractive, due to its emerging chances to realize large-scale interrogation via a CMOS compatible process [10,14,15,19,20], as well as its potential to fuse its data processing capability with the strong power of silicon photonics on data transmission at communication wavelengths around 1.31 μm and 1.55 μm [19,20].…”

Section: Introductionmentioning

confidence: 99%

An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

2021

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We present a numerical design of the plasmonic memristive switching device operated at the telecommunication wavelength of 1.55 μm, which consists of a triangle-shaped metal taper mounted on top of a Si waveguide, with rational doping in the area below the apex of the taper. This device can achieve optimal vertical coupling of light energy from the Si waveguide to the plasmonic region and, at the same time, focus the plasmon into the apex of the metal taper. Moreover, the area with concentrated plasmon is overlapped with that where the memristive switching occurs, due to the formation/removal of the metallic nano-filament. As a result, the highly distinct transmission induced by the switching of the plasmonic memristor can be produced because of the maximized interactions between the filament and the plasmon. Our numerical simulation shows that the device hasa compact size (610 nm), low insertion loss (~1 dB), and high extinction efficiency (4.6 dB/μm). Additionally, we point out that stabilizing the size of the filament is critical to improve the operation repeatability of the plasmonic memristive switching device.

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“…Transparent conducting oxides have been an increasingly object of interest because their epsilon-near-zero (ENZ) regime in the near-infrared (near-IR) region of the spectrum [24]. In the field of PICs, this unique feature has been exploited to provide high performance electro-absorption devices [25][26][27][28][29][30][31][32][33][34][35], since optical losses are drastically enhanced in the ENZ regime. Nevertheless, if the TCO is biased far from the ENZ regime, this behaves as an optically transparent and electrically conducting material and thus, an ideal candidate for using as an ultra-low loss microheater.…”

Section: Introductionmentioning

confidence: 99%

Ultra-low loss hybrid ITO/Si thermo-optic phase shifter with optimized power consumption

Parra¹,

Hurtado²,

Griol³

et al. 2020

Opt. Express

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Typically, materials with large optical losses such as metals are used as microheaters for silicon based thermo-optic phase shifters. Consequently, the heater must be placed far from the waveguide, which could come at the expense of the phase shifter performance. Reducing the gap between the waveguide and the heater allows reducing the power consumption or increasing the switching speed. In this work, we propose an ultra-low loss microheater for thermo-optic tuning by using a CMOS-compatible transparent conducting oxide such as indium tin oxide (ITO) with the aim of drastically reducing the gap. Using finite element method simulations, ITO and Ti based heaters are compared for different cladding configurations and TE and TM polarizations. Furthermore, the proposed ITO based microheaters have also been fabricated using the optimum gap and cladding configuration. Experimental results show power consumption to achieve a π phase shift of 10 mW and switching time of a few microseconds for a 50 µm long ITO heater. The obtained results demonstrate the potential of using ITO as an ultra-low loss microheater for high performance silicon thermo-optic tuning and open an alternative way for enabling the large-scale integration of phase shifters required in emerging integrated photonic applications.

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Non-volatile epsilon-near-zero readout memory

Cited by 21 publications

References 29 publications

Toward Nonvolatile Switching in Silicon Photonic Devices

Toward Nonvolatile Switching in Silicon Photonic Devices

An Ultra-Compact Design of Plasmonic Memristor with Low Loss and High Extinction Efficiency Based on Enhanced Interaction between Filament and Concentrated Plasmon

Ultra-low loss hybrid ITO/Si thermo-optic phase shifter with optimized power consumption

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