Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism

“…Strain due to lattice mismatch can be effectively relieved in the lateral directions, − and the probability of forming APBs is remarkably reduced. High-quality single-crystal III–V nanowires grown on a Si substrate have been successfully demonstrated in recent years. − ,− A wide range of applications have also been explored including high-speed transistors, tunnel diodes, , light-emitting diodes (LEDs), ,, room-temperature lasers, and solar cells …”

“…Vertical nanowire arrays have been successfully obtained through Au-catalyzed VLS in molecular beam epitaxy (MBE) ,, and metalorganic chemical vapor deposition (MOCVD). ,,,,, On the other hand, the use of Au during the growth − leads to the speculation that deep levels acting as recombination centers may be created . Group III atom self-catalyzed VLS growth has thus attracted attention since no foreign metal intermixing is involved in this method. − ,,− However, the metal droplet places constraints on the growth of axial heterostructure with different group III elements. The droplet usually remains after growth due to the properties of VLS growth and is undesired in some applications such as efficient light extraction in LEDs and good ohmic contact formation in solar cells.…”