Non-stoichiometry and electronic properties of interfaces

Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices

“…TFE cannot be applicable here as measurements were performed at room temperature because high temperature environment is required here so that carrier may tunnel through the thinner part of the barrier height. 20 However, the role of interface and/or surface states cannot be avoided. Characteristically, these states can act as carrier trap and/or recombination centers.…”

Fully integrated Ag nanoparticles/ZnO nanorods/graphene heterostructured photocatalysts for efficient conversion of solar to chemical energy

“…The main emission peak is centered at about 374 nm in each spectrum, in which luminescence corresponds to the ZnO band gap recombination of electron-hole pairs. Additionally, a weak yellow emission band appears in the visible range, indicating the existence of low-density deep-level defects, which are attributed to oxygen vacancies in ZnO [27]. Importantly, the AgNPs-ZNRs-GR heterostructure exhibited a lower recombination rate of excited electrons and holes, as indicated by the weaker PL emission at 374 nm.…”

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

“…This may cause a flow of excess current leading to a deviation from the ideal TE behavior. A high ideality factor is often attributed to defect states in the band gap of the semiconductor providing other current transport mechanism such as barrier tunneling or generation recombination in the space charge region [18]. As the annealing temperature increases, the amount of transferred charge increases, which creates more defects in the InP close to the interface and inside the interfacial layer.…”