Non-polara-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy

Chauveau, J.-M.; Laügt, M.; Vennéguès, P.; Teisseire, M.; Lö, B.; Deparis, C.; Morhain, C.; Vinter, B.

doi:10.1088/0268-1242/23/3/035005

Cited by 64 publications

(45 citation statements)

References 30 publications

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“…7,8 Furthermore, it has been experimentally shown that the lack of internal electric field in a-plane ZnMgO/ZnO heterostructures results in more efficient radiative recombination in quantum wells, i.e., no quantum confined Stark effect, as desired for emitter applications. 9 Currently, work on Mg x Zn 1Àx O is in the very early stages in terms of applications of Mg x Zn 1Àx O for devices applications such as UV light emitting diodes (LEDs) and detectors. [3][4][5]10,11 Ultimately, as with all optoelectronic devices, the presence of various defects that can create bandgap states is of great interest since they reduce performance, hinder reliability, and lower device lifetime.…”

Section: Introductionmentioning

confidence: 99%

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Gür

Tabares

Arehart³

et al. 2012

Journal of Applied Physics

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Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe J. Appl. Phys. 112, 073111 (2012) Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen Appl. Phys. Lett. 101, 122104 (2012) Donor behavior of Sb in ZnO J. Appl. Phys. 112, 033706 (2012) Transition levels of defects in ZnO: Total energy and Janak's theorem methods J. Chem. Phys. 137, 054709 (2012) Ab-initio studies on Li doping, Li-pairs, and complexes between Li and intrinsic defects in ZnO J. Appl. Phys. 111, 123713 (2012) Additional information on J. Appl. Phys. Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1Àx O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1Àx O were examined with x ¼ 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c À 1.4 eV, 2.1 eV, 2.6 V, and E v þ 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c À 2.1 eV, E v þ 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v þ 0.3 eV and E c À 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v þ 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c À 1.4 eV and E c À 2.6 eV levels in Mg alloyed samples. V C 2012 American Institute of Physics.[http://dx

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Section: Introductionmentioning

confidence: 99%

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Gür

Tabares

Arehart³

et al. 2012

Journal of Applied Physics

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“…In fact, many studies have reported that Mg is favorable for growth of ternary compounds with ZnO due to the similarity of ionic radius between Zn (0.60 Å) and Mg (0.57 Å) [13][14][15]. However, only a few studies on growth and properties of nonpolar Mg x Zn 1Àx O film have been performed [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Han

Lee

Kim

et al. 2015

Journal of Alloys and Compounds

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“…However, devices based on [0001]-oriented wurtzite materials are known to present spontaneous and piezoelectric electrostatic fields which spatially separate electrons and holes in the active layers and, thus, limit the device quantum efficiency [8]. Therefore, alternative growth orientations have been recently proposed with the polar [0001] direction within the growth plane [9,10] and quantum wells (QWs) free of electric fields have already been demonstrated [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Structural, Morphological, Optical and Electrical Properties of Zn(1-x)CdxO Solid Solution Grown on a- and r-Plane Sapphire Substrate by MOCV

Fouzri¹,

Boukadhaba²,

Tauré³

et al. 2013

JCPT

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Zn (1−x) Cd x O films have been grown on  1120  (a-plane) and   0112 (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been respectively determined for films deposited on a-and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction of the solid solutions. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0001] direction and a-plane   1120 film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). The room temperature hall mobility decreases with the Cd incorporation but it is larger for Zn (1−x) Cd x O grown on r-plane sapphire.

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Non-polara-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy

Cited by 64 publications

References 30 publications

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Structural, Morphological, Optical and Electrical Properties of Zn<sub>(1-x)</sub>Cd<sub>x</sub>O Solid Solution Grown on <i>a</i>- and <i>r</i>-Plane Sapphire Substrate by MOCV

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Non-polara-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy

Cited by 64 publications

References 30 publications

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Structural, Morphological, Optical and Electrical Properties of Zn&lt;sub&gt;(1-x)&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;O Solid Solution Grown on &lt;i&gt;a&lt;/i&gt;- and &lt;i&gt;r&lt;/i&gt;-Plane Sapphire Substrate by MOCV

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Structural, Morphological, Optical and Electrical Properties of Zn<sub>(1-x)</sub>Cd<sub>x</sub>O Solid Solution Grown on <i>a</i>- and <i>r</i>-Plane Sapphire Substrate by MOCV