Non-oscillatory antiferromagnetic coupling in sputtered Fe/Si superlattices

Fullerton, Eric E.; Mattson, J. E.; Lee, S.R.; Sowers, C. H.; Huang, Y. Y.; Felcher, G. P.; Bader, S. D.; Parker, F. T.

doi:10.1016/0304-8853(92)90084-2

Cited by 143 publications

(49 citation statements)

References 22 publications

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“…The thickness of the intermixed region is about 8 Å, i.e., of the order of the Si spacer thickness. Hence, the coupling is not mediated by a Si-rich or even pure Si interlayer but by a possibly metallic FeSi layer consistent with previous studies of sputtered Fe/ Si systems 31,32 and spectroscopic measurements of sputtered Fe/ Si multilayers by Carlisle et al 33 A metallic spacer could be the reason for the increase in ͑bilinear͒ coupling strength at a Si thickness of 19 Å in Fig. 11͑a͒, which possibly indicates oscillatory behavior of the coupling.…”

Section: Fe/ Si/ Fe Trilayerssupporting

confidence: 88%

“…31,34,35 On the other hand, the coupling strength is similar to those found in sputtered, epitaxial, or polycrystalline Fe/ Si multilayers. 31,32,[36][37][38] Further experiments have to be performed to decrease the intermixing. One possibility is to vary the target angle , because the high-energetic Ar ions reflected towards the substrate are likely to intensify interdiffusion processes.…”

Section: Fe/ Si/ Fe Trilayersmentioning

confidence: 99%

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Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Damm

Büchmeier

Schindler

et al. 2006

Journal of Applied Physics

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We grow monocrystalline Fe͑001͒ films and Fe/ Si/ Fe͑001͒ trilayers by ion-beam sputter epitaxy on GaAs͑001͒ and MgO͑001͒ substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe͑001͒ films with respect to epitaxial growth and magnetic properties. In situ low-energy electron diffraction patterns confirm the epitaxial and monocrystalline nature of the sputtered films, surprisingly even on untreated and thus oxidized substrates. The magneto-optical Kerr effect and ferromagnetic resonance are employed to investigate the magnetic properties, and the structural properties are characterized by atomic force microscopy and x-ray reflectivity measurements. Using the optimized set of parameters that yields the best magnetic properties for single Fe films on GaAs, we deposit epitaxial Fe/ Si/ Fe͑001͒ structures and observe antiferromagnetic interlayer exchange coupling for epitaxially sputtered Fe/ Si/ Fe͑001͒ trilayers on GaAs͑001͒. The total coupling strength reaches values of up to 2 mJ/ m 2 at a Si thickness of 15 Å.

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Section: Fe/ Si/ Fe Trilayerssupporting

confidence: 88%

Section: Fe/ Si/ Fe Trilayersmentioning

confidence: 99%

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Damm

Büchmeier

Schindler

et al. 2006

Journal of Applied Physics

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“…2 Fe/Si/Fe structures are complex objects for the study of magnetic and transport properties because of the interdiffusion at interfaces with the possible formation of iron silicides of different structure and composition. [3][4][5][6][7] As was shown earlier, Si grown on Fe tends to interdiffuse and to crystallize in epitaxially stabilized CsCl-type, metallic Fe 0.5 Si 0.5 ͑Ref. 3͒ and exhibits an exponential decay of coupling versus spacer thickness ͑Refs.…”

mentioning

confidence: 66%

Enhanced antiferromagnetic exchange coupling in Fe/Si/Fe epitaxial trilayers with Fe0.5Si0.5 boundary layers

Gareev

Bürgler

Büchmeier

et al. 2002

Applied Physics Letters

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Epitaxial Fe/Fe 0.5 Si 0.5 /Si-wedge/Fe 0.5 Si 0.5 /Fe structures are prepared by thermal evaporation with Fe 0.5 Si 0.5 boundary layers grown by coevaporation at 200°C. Magnetic properties are examined with Brillouin light scattering and longitudinal magneto-optic Kerr effect hysteresis. The interlayer coupling is found to increase in excess of 8 mJ/m 2 by introducing a boundary layer at the bottom interface. The coupling maximum shifts from 7 to 3 Å nominal Si thickness. This effect is related to reduced interdiffusion with the formation of an epitaxial, pinhole-free spacer at smaller thickness. Together with the strong increase of the coupling for decreasing spacer thickness, this results in an enhancement of the coupling. © 2002 American Institute of Physics. ͓DOI: 10.1063/1.1499229͔ Fe/Si/Fe structures are attracting interest due to strong antiferromagnetic ͑AF͒ coupling which is of significance in applications using artificial antiferromagnets and ferrimagnets as, for instance, in magnetic sensors 1 or more recently in antiferromagnetically coupled ͑AFC͒ storage media for hard disk drives. 2 Fe/Si/Fe structures are complex objects for the study of magnetic and transport properties because of the interdiffusion at interfaces with the possible formation of iron silicides of different structure and composition. [3][4][5][6][7] As was shown earlier, Si grown on Fe tends to interdiffuse and to crystallize in epitaxially stabilized CsCl-type, metallic Fe 0.5 Si 0.5 ͑Ref. 3͒ and exhibits an exponential decay of coupling versus spacer thickness ͑Refs. 5 and 7͒. This unusual behavior was related to a new type of exchange coupling across metallic-type spacers 5 in contradiction with the standard quantum interference model ͑QIM͒ of interlayer coupling. 8 The QIM predicts an exponential decay of AF coupling only for nonconducting spacers but oscillatory coupling for metallic spacers.In order to distinguish metallic and insulating-type spacers, we have previously prepared epitaxial Fe/Fe 1Ϫx Si x /Fe trilayers by codeposition of Fe and Si instead of relying on interdiffusion. We achieved a spacer composition close to Fe 0.5 Si 0.5 ͑Ref. 9͒ and spacers with variable Si content x in the range 0.4ϽxϽ1 ͑Ref. 10͒. We deposited Fe 0.5 Si 0.5 spacer layers at an elevated temperature (200°C) in order to form metallic, epitaxial iron silicides and obtained weak oscillatory coupling ͑less than 1 mJ/m 2 ͒. 9 In these samples, the coupling strength increased with decreasing temperature in agreement with the QIM for metallic spacers. 8 Second, we showed that the interlayer exchange coupling strongly increases with the nominal Si content x in epitaxial Fe 1Ϫx Si x spacers exceeding 5 mJ/m 2 for nominally pure Si spacers. With the increase of nominal Si content x, the thickness of the strongest AF coupling (t max ) shifted to a smaller Si thickness. We concluded that the very strong coupling ͑more than 5 mJ/m 2 ͒ observed for nominally pure Si spacers is not due to metallic iron silicides, but due to highly resistive, Si-rich spacers...

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“…Heterostructural junctions comprising ferromagnetic and semiconducting layers such as GaMnAs/GaAs [5], GaMnAs/AlAs [6,7], Fe/Si [8,9,10], and Fe/Fe1-xSix [11,12] has received attention from physical and practical viewpoints, since the electric state of semiconductors is changeable by irradiating and heating (cooling), resulting in a change in the magnetoresistance (MR) effect.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

Ishibashi¹,

Kobayashi²,

Nakashima³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Fe3Si/FeSi2/Fe3Si trilayered junctions were fabricated by facing targets direct-current sputtering combined with a mask method, and the spin valve signals of the junctions were studied in the temperature range from 50 to 300 K. Whereas the magnetoresistance ratio of giant magnetoresistance and tunnel magnetoresistance junctions monotonically increases with decreasing temperature, that of our samples has the maximum value around 80 K and decreases with decreasing temperature at lower than 80 K, which might be due to an increase in the electrical conductivity mismatch between the metallic Fe3Si layers and semiconducting FeSi2 interlayer in the low temperature range .

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Non-oscillatory antiferromagnetic coupling in sputtered Fe/Si superlattices

Cited by 143 publications

References 22 publications

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Enhanced antiferromagnetic exchange coupling in Fe/Si/Fe epitaxial trilayers with Fe0.5Si0.5 boundary layers

Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions

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Non-oscillatory antiferromagnetic coupling in sputtered Fe/Si superlattices

Cited by 143 publications

References 22 publications

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Magnetic properties of Fe films and Fe∕Si∕Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

Enhanced antiferromagnetic exchange coupling in Fe/Si/Fe epitaxial trilayers with Fe0.5Si0.5 boundary layers

Temperature-dependent magnetoresistance effects in Fe3Si/FeSi2/Fe3Si trilayered spin valve junctions

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Product

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Temperature-dependent magnetoresistance effects in Fe₃Si/FeSi₂/Fe₃Si trilayered spin valve junctions