2018
DOI: 10.1016/j.jallcom.2018.01.202
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Non-Ohmic properties of MgTiO3 doped CaCu3Ti4O12 thin films deposited by magnetron sputtering method

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Cited by 18 publications
(6 citation statements)
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“…[ 6,7 ] Several methods have been used in investigations of the grain boundaries of CCTO materials. [ 8,9 ] The IBLC hypothesis, which holds that a significant intrinsic potential barrier existed at the CCTO grain boundaries, is supported by S. Y. Chung's proof of the insulator–semiconductor junction assumption. For the gigantic dielectric permittivity, several theoretical models have received widespread acceptance, although they are still debatable.…”
Section: Introductionmentioning
confidence: 97%
“…[ 6,7 ] Several methods have been used in investigations of the grain boundaries of CCTO materials. [ 8,9 ] The IBLC hypothesis, which holds that a significant intrinsic potential barrier existed at the CCTO grain boundaries, is supported by S. Y. Chung's proof of the insulator–semiconductor junction assumption. For the gigantic dielectric permittivity, several theoretical models have received widespread acceptance, although they are still debatable.…”
Section: Introductionmentioning
confidence: 97%
“…Intrinsic mechanisms (such as local carrier jumping [9]) and extrinsic peculiarities (e.g., twin boundaries [3], defects [10], and internal barrier layer capacitance (IBLC)) have been used so far to explain the origin of the giant dielectric constant of CCTO. Among them, the widely employed IBLC model considers the microstructure of semiconductive grains and insulating grain boundaries (GBs) [11][12][13][14]. Excessive charges, passing through the grains and accumulating at the insulated GBs, ensure a high dielectric constant (ε′) in the external electric field.…”
Section: Introductionmentioning
confidence: 99%
“…Excessive charges, passing through the grains and accumulating at the insulated GBs, ensure a high dielectric constant (ε′) in the external electric field. This also causes the excessive dielectric loss (tanδ > 0.1) of CCTO, which limits its application prospects [2,4,6,[11][12][13][14]. Moreover, CCTO also possesses good non-Ohmic properties, which makes it a dual-functional material with dielectric and varistor characteristics [7,11,[14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
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“…CCTO is one of the most interesting giant dielectric oxides. It has been intensively studied for purely scientific and technological reasons [1,[12][13][14][15][16][17][18]. This is because CCTO and related ACu 3 Ti 4 O 12 (A=Cd 2+ , Na + 1/2 Bi 3+ 1/2 , Na + 1/2 Y 3+ 1/2 , Na + 1/3 Ca 2+ 1/3 Bi 3+ 1/3 , etc) ceramics can exhibit very high ε′ values of about 10 3 -10 5 at room temperature, depending on sintering conditions [12][13][14].…”
Section: Introductionmentioning
confidence: 99%