Emergence of Dielectric Properties by Doping of Semi‐Transition Metal in Semiconductor Complex Perovskite Oxide

Abstract

The effect of zinc substitution at the Cu 2+ site and germanium substitution at the Ti 4+ site in bismuth copper titanate, Bi 2/3 Cu 3 Ti 4 O 12 , is investigated. Composition with x = 0.05 is synthesized by semi-wet route in the system Bi 2/3 Cu 3 Ti 4−x Ge x O 12 (BCTGO) and Bi 2/3 Cu 3−x Zn x Ti 4−x Ge x O 12 (BCZTGO) that are sintered at 1123 K for 8 h. Crystal structure has remained cubic. The phase formations of these ceramics are confirmed by the X-ray diffraction. The microstructural analysis of the samples is done by scanning electron microscopy and tunneling electron microscopy. Elemental analysis is performed by energy dispersive X-ray spectroscopy. X-ray photoelectron spectroscopy suggests that all elements present in these ceramics are in proper oxidation states. The dielectric constant is found high for BCTGO-0.05 ceramic. The specific capacitances of BCTGO-0.05 and BCZTGO-0.05 are found to be 13.05 and 15.7 F g −1 , respectively. Optical band gap values (E g ) of BCTGO-0.05 and BCZTGO-0.05 ceramics are found as 1.77 and 1.91 eV.