Non-Local Lateral Spin-Valve Devices Fabricated With a Versatile Top-Down Fabrication Process

Smith, Angeline Klemm; Jamali, Mahdi; Stecklein, Gordon; Crowell, P. A.; Wang, Jianping

doi:10.1109/lmag.2016.2555290

Cited by 3 publications

(6 citation statements)

References 25 publications

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“…Such an influence of the spin accumulation properties by spin injector materials, geometry structures and boundary conditions could be recognized as a spin reservoir effect. To improve the spin accumulation properties with respect to the spin reservoir effect, one of the best candidate structures is pillar-based lateral spin valves (pLSVs), where the ferromagnetic electrodes are nano-sized dots [31][32][33][34]. Compared to the wire-based lateral spin valves (wLSVs), the Joule heating effect can be significantly reduced owing to the strong heat sink in the spin channel.…”

Section: Introductionmentioning

confidence: 99%

Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

Cui¹,

Hu²,

Kimura³

2022

J. Phys. D: Appl. Phys.

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Lateral spin valves are ideal nanostructures for investigating spin-transport physics phenomena and promoting the development of future spintronic devices owing to dissipation-less pure spin current. The magnitude of the spin accumulation signal is well understood as a barometer for characterizing spin current devices. Here, we develop a novel fabrication method for lateral spin valves based on ferromagnetic nanopillar structures using a multi-angle deposition technique. We demonstrate that the spin-accumulation signal is effectively enhanced by reducing the lateral dimension of the nonmagnetic spin channel. The obtained results can be quantitatively explained by the confinement of the spin reservoir by considering spin diffusion into the leads. The temperature dependence of the spin accumulation signal and the influence of the thermal spin injection under a high bias current are also discussed.

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Section: Introductionmentioning

confidence: 99%

Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

Cui¹,

Hu²,

Kimura³

2022

J. Phys. D: Appl. Phys.

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“…Nowdays, multilayer spin-valve structures with vertical arrangement of the injection and detection ferromagnetic electrodes (FM) separated by a thin layer of a paramagnetic metal or insulator are applied as an "active" element in the majority of spintronic devices [10]. However, there is a growing interest to investigation of spin-valve structures with lateral geometry of injection and detection FM electrodes connected by a "bridge" of paramagnetic metal [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25], semiconductor [26][27][28][29][30][31][32], graphen [33,34] or conducting polymer material [35]. This location of FM electrodes in a lateral spin-valve structure (LSV) gives it possible to separate injection's circuit of spinpolarized current and detection's circuit by means of a non-local geometry of spin injection and accumulation proposed in [36].…”

Section: Introductionmentioning

confidence: 99%

“…non-magnetic (NM) material and cleanliness of interface between FM metal and NM material. Thus, to increase the spin accumulation voltage, strong ferromagnetic materials with high spin polarization like NiFe [12-19, 21, 22, 32, 33, 35], FeCo [25], Co [14,15,23,30,34], CoFeAl [11,18], Co 2 FeSi [20,24,31] and nonmagnetic materials with the highest spin diffusion length are applied to form FM and NM electrodes.…”

Section: Introductionmentioning

confidence: 99%

“…Currently, LSV structures based on polycrystalline films of ferromagnetic and paramagnetic metals Cu [13][14][15][16][17][18][19][20][21][22][23][24][25], Al [14,25], Ag [12,17,25], Au [15,25] got the most widespread due to simplicity of fabrication such structures. However, spin diffusion length of paramagnetic metals commonly less than few hundreds nanometers [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]37]. By this reason, the magnitude of spin accumulation voltage U s measured in non-local geometry for FM-NM metal based LSV structures is of few microvolts magnitude at cryogenic temperature [11][12][13][14][15][16][17][18][19][20][...…”

Section: Introductionmentioning

confidence: 99%

“…However, spin diffusion length of paramagnetic metals commonly less than few hundreds nanometers [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]37]. By this reason, the magnitude of spin accumulation voltage U s measured in non-local geometry for FM-NM metal based LSV structures is of few microvolts magnitude at cryogenic temperature [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Note, that U s for such LSV can be increased to few hundreds microvolts at cryogenic temperatures by using the tunnel barrier between FM and NM metals [12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

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INFLUENCE OF THE MAGNITUDE AND DIRECTION OF DC-INJECTION CURRENT ON SPIN ACCUMULATION AND THERMOEMF IN NiCo-InSb-NiCo LATERAL SPIN VALVE

Nikulin¹,

E.²,

Veselov³

et al. 2018

RENSIT

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The influence of the direction and magnitude of the dc-injection current I (5µA-2 mA) on the spin accumulation U s and the thermo electromotive force U e in the NiCo-InSb-NiCo lateral spin-valve structure based on textured n-InSb(111) film with thickness d ≈ 500 nm and an electron mobility µH ≈ 2.1 m 2 /V•s were studied. For non-local injection and detection geometry at T ≈ 300 K it was found that at injection current I less than critical Ic, the value of which is determined by the geometry of the structure, the detected voltage U ac = U s + U e increases linearly with I from units to a few hundred microvolts and differs in sign for direct and reverse directions of injection current (|I| < I c is the region of spin accumulation, U ac ≈ U s). At injection currents |I| > I c , a sharp increase of the detected voltage to a few units or tens of millivolts is observed, and the sign of the detected voltage is positive for both directions of the injection current (at |I| > I c dominates the thermoe-lectric effect, U ac ≈ U e , U s << U e).

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A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets

Rangarajan

Parthasarathy

Rakheja

2017

Journal of Applied Physics

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In this paper, we propose a spin-based true random number generator (TRNG) that uses the inherent stochasticity in nanomagnets as the source of entropy. In contrast to previous works on spin-based TRNGs, we focus on the precessional switching strategy in nanomagnets to generate a truly random sequence. Using the NIST SP 800-22 test suite for randomness, we demonstrate that the output of the proposed TRNG circuit is statistically random with 99% confidence levels. The effects of process and temperature variability on the device are studied and shown to have no effect on the quality of randomness of the device. To benchmark the performance of the TRNG in terms of area, throughput, and power, we use SPICE (Simulation Program with Integrated Circuit Emphasis)-based models of the nanomagnet and combine them with CMOS device models at the 45 nm technology node. The throughput, power, and area footprints of the proposed TRNG are shown to be better than those of existing state-of-the-art TRNGs. We identify the optimal material and geometrical parameters of the nanomagnet to minimize the energy per bit at a given throughput of the TRNG circuit. Our results provide insights into the device-level modifications that can yield significant system-level improvements. Overall, the proposed spin-based TRNG circuit shows significant robustness, reliability, and fidelity and, therefore, has a potential for on-chip implementation.

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Non-Local Lateral Spin-Valve Devices Fabricated With a Versatile Top-Down Fabrication Process

Cited by 3 publications

References 25 publications

Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

INFLUENCE OF THE MAGNITUDE AND DIRECTION OF DC-INJECTION CURRENT ON SPIN ACCUMULATION AND THERMOEMF IN NiCo-InSb-NiCo LATERAL SPIN VALVE

A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets

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