Abstract:The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity. At high voltages the total stored energy E oss (V DC) in the output capacitance C oss (v) differs substantially from the energy in an equivalent linear capacitor C oss(tr) storing the same amount of charge. That difference requires the definition of an additional equivalent linear capacitor C oss(er) storing the same amount of energy at a specific voltage. However, the parasitic capacitances of current SiC and GaN devi… Show more
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