Non-exponential capacitance transient in deep level transient spectroscopy (DLTS) measurements

Shaban, Elahi

doi:10.1016/0038-1101(95)00153-0

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…In the last two decades, many variations of the method were developed and adapted for studying the defect properties of a vanety of rnatenals and devices. Still, new modifications and m e r improvements of the already existing DLTS techniques are regularly reported [3,19,34,54,76,95,150,152,179,187,202].…”

Section: Deep Level Transient Spectroscopymentioning

confidence: 99%

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Kolev

Deen

1999

Advances in Imaging and Electron Physics

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This manuscript has been reproduced frorn the microfilm master. UMI films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be frorn any type of computer printer.The quality of this reproduction i s dependent upon the quality of the copy submitted. Broken or indistinct ptint, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized wpwght material had to be removed, a note will indicate the deletion.Oversize materials (e-g., maps, drawings, charts) are reproduced by sedioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overlaps. Each original is also photographed in one exposure and is included in reduced form at the back of the book.Photographs included in the original manuscript have been reproduced xerographically in this copy. Higher quality 6" x 9" black and white photographic prints are available for any photographs or illustrations appearing in this w p y for an additional charge. Contact UMI directly to order. The author has granted a nonexclusive licence allowing the National Library of Canada to reproduce, loîn, distribute or sell copies of this thesis in microform, paper or electronic formats.The author retains ownership of the copyright in this thesis. Neither the thesis nor substantial extracts fiom it may be printed or othenirise reproduced without the author's permission.L'auteur a accordé une licence non exclusive permettant à la Bibliothéque nationale du Canada de reproduire, prêter, distribuer ou vendre des copies de cette thèse sous la forme de microfiche!film, de reproduction sur papier ou sur format électronique.L'auteur conserve la propriété du droit d'auteur qui protège cette thèse. Ni fa thèse ni des extraits substantiels de celle-ci ne doivent être imprimés ou autrement reproduits sans son autorisation, AbstractIn this thesis, we report new advancements in the field of Deep Level Transient Spectroscopy (DLTS) which is a powerfûl method for investigation of elecûically active point defects in semiconductors. We demonstrate these advancements by building a stateof-the-art DLTS system and perfonning extensive measurements on several types of fieldeffec t transis tors (FETs) .We iltroduce a new approach to digital signal processing in DLTS systems. The problems of signal recovery from noise and efficient data storage are addressed separately from the transient signal analysis. We combine two complementary digital averaging techniques which substantially improve the DLTS digital signal processing. Compared to other digital D U S systems, the new averaging techniques offer an improved time resolution at the beginning of the transient, improved signal-to-noise ratio, and more efficient data stor...

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Section: Deep Level Transient Spectroscopymentioning

confidence: 99%

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Kolev

Deen

1999

Advances in Imaging and Electron Physics

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Investigation of carrier removal in electron irradiated silicon diodes

Taylor

Yamaguchi

Matsuda³

et al. 1997

Journal of Applied Physics

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We present a detailed study of n+\p\p+ silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance–voltage (C–V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current–voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C–V results imply that other trap levels must play a more important role in the carrier removal process.

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Non-exponential capacitance transient in deep level transient spectroscopy (DLTS) measurements

Cited by 2 publications

References 6 publications

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Investigation of carrier removal in electron irradiated silicon diodes

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