2023
DOI: 10.1016/j.nanoen.2022.108118
|View full text |Cite
|
Sign up to set email alerts
|

Non-equilibrium strategy for enhancing thermoelectric properties and improving stability of AgSbTe2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
19
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
9

Relationship

3
6

Authors

Journals

citations
Cited by 24 publications
(19 citation statements)
references
References 63 publications
0
19
0
Order By: Relevance
“…Notably, no Ag 2 Te peak can be observed, which is in contrast to typical scans from AgSbTe 2 samples. 28 This observation can be ascribed to the phase diagram in Fig. 1 which shows that with increasing annealing temperature above 633 K, Ag 2 Te-deficient samples tend to form a stable phase of Ag 1−x Sb 1+x Te 2+x .…”
Section: Resultsmentioning
confidence: 90%
See 1 more Smart Citation
“…Notably, no Ag 2 Te peak can be observed, which is in contrast to typical scans from AgSbTe 2 samples. 28 This observation can be ascribed to the phase diagram in Fig. 1 which shows that with increasing annealing temperature above 633 K, Ag 2 Te-deficient samples tend to form a stable phase of Ag 1−x Sb 1+x Te 2+x .…”
Section: Resultsmentioning
confidence: 90%
“…Notable among these are compounds based on GeTe, SnSe, Cu 2 Se, Mg 3 Sb 2 , and AgSbTe 2 . [25][26][27][28][29][30][31][32][33][34][35][36][37] In particular, AgSbTe 2 can potentially be used for both near room temperature and medium temperature applications, making it a versatile high performance thermoelectric material. [38][39][40][41][42][43][44][45][46] Due to the high intrinsic Seebeck coefficient and low intrinsic thermal conductivity, high thermoelectric performance can be achieved in AgSbTe 2 even in the absence of doping.…”
Section: Introductionmentioning
confidence: 99%
“…10(c), that S declines dramatically at low carrier concentrations with the excitation of carriers at high temperatures, and the peak value of S shifts towards higher carrier concentrations. Compared to the common Janus TE materials, such as PbSSe with 6% strain (209.52 μV K −1 ), 69 MoSSe (240 μV K −1 ), 70 SnSSe with 8% strain (189.03 μV K −1 ), 71 and AgSbTe 2 (250 μV K −1 at ∼ 330 K), 72 Janus MXTe monolayers with similar S values will possess excellent TE performance.…”
Section: Resultsmentioning
confidence: 99%
“…17 In the past decades, significant development of thermoelectric technology has focused on the enhancement of zT. [18][19][20] The zT is highly temperature-dependent, 21,22 which determines their applicability to function under different scenarios and temperature regions. According to the application temperature region, thermoelectric materials can be categorized into near roomtemperature (T o 500 K), mid-temperature (500 r T o 800 K), and high-temperature (T Z 800 K) types.…”
Section: Introductionmentioning
confidence: 99%