Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 10 15 Er/cm 2 . One sample was coimplanted with oxygen to give an impurity concentration of 10 20 O/cm 3 and 10 19 Er/cm 3 . In this coimplanted sample, sharp lines are observed which are identified as arising from a single spin 1/2 Er 3ϩ center having a g tensor exhibiting monoclinic C 1h symmetry. The principal g values and tilt angle are g 1 ϭ0.80, g 2 ϭ5.45, g 3 ϭ12.60, and ϭ2.6°. In the absence of O, the sharp lines are not observed. No Er 3ϩ cubic centers were detected in either sample. Possible structures for the center are discussed. © 1996 American Institute of Physics. ͓S0003-6951͑96͒02051-7͔Rare-earth doped semiconductors have attracted a great deal of attention because of their possible applications in optoelectronics. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The sharp intra 4 f shell transitions, which result from the 4 f electrons being shielded from the full effect of the crystal field, give rise to emissions which are largely independent of the surrounding environment. These emissions can be electrically excited which is important for device applications. Erbium doped silicon has attracted particular attention because the Er 3ϩ transition 4 I 13/2 → 4 I 15/2 at 1.54 m matches the minimum in the absorption of silica-based optical fibers. One of the major problems hampering future applications of Si:Er in optoelectronics is the strong quenching behavior of both the photo 2 -and electroluminescence 1 on going from 77 K to room temperature ͑RT͒. It has now been shown that the incorporation of other impurities, notably oxygen, can significantly increase the luminescence intensity 2 and help to suppress the temperature quenching of the luminescence. 5 Recently 7-9 RT electroluminescence has also been obtained from Er-doped Si p-n diodes codoped with either O or F. Furthermore, it has been shown that, in spite of the low solid solubility 10 of Er in Si (ϳ2ϫ10 16 /cm 3 at 900°C͒ higher Er concentrations ͑up to ϳ10 20 /cm 3 ) can be incorporated by chemical vapor deposition, 11 molecular beam epitaxy, 12 or by using the solid phase epitaxial regrowth of an amorphous layer produced by Er implantation. 13 Codoping with O or F allows the suppression of Er segregation at the moving crystal-amorphous interface and the regrowth of thick (ϳ2 m͒ recrystallized layers. 14 All of these beneficial effects have been attributed 6 to modifications in the local environment of Er produced by the codopants. Although strong evidence of the modifications of the electrical properties of Er in Si in the presence of O ͑or F) has been provided, 4,15,16 there is little experimental information on how the site location and coordination of Er in Si is altered by the presence of other impurities.In this letter, we report on the first electron paramagnetic resonance ͑EPR͒ measurements made on Er implanted float zone ͑FZ͒ Si coimplanted with O. We show that the presence of oxygen has a pronounced effect on the type of E...