Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors

Ackaert, J.; Wang, Zhichun; Backer, E. De; Colson, P.; Coppens, P.

doi:10.1016/s0026-2714(01)00158-5

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A Mim Capacitor Processing1

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2004

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“…The MIM capacitor is implemented using the above scheme in a CMOS backend flow with 1.1-m metal pitch design rules [9].…”

Section: A Mim Capacitor Processingmentioning

confidence: 99%

Plasma-Charging Damage of Floating MIM Capacitors

Wang

Ackaert

Salm

et al. 2004

IEEE Trans. Electron Devices

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Abstract-In this paper, the mechanism of plasma-charging damage (PCD) of metal-insulator-metal (MIM) capacitors as well as possible protection schemes are discussed. A range of test structures with different antennas simulating interconnect layout variations have been used to investigate the mechanism of PCD of MIM capacitors. Based on the experimental results, two models are presented, describing the relation between the damage and the ratio of the area of the exposed antennas connected to the MIM capacitors plates. New design rules are proposed in order to predict and automatically flag possible PCD sites. Furthermore, layout solutions to reduce PCD are suggested. Index Terms-Antenna ratio (AR), metal-insulator-metal (MIM), plasma-charging damage (PCD).

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“…The MIM capacitor is implemented using the above scheme in a CMOS backend flow with 1.1-m metal pitch design rules [9].…”

Section: A Mim Capacitor Processingmentioning

confidence: 99%